Publications - Electronic Devices and System Laboratory

Journals (2010. 3 ~ )

[154] S. -J. Chae et al., "Low-Frequency ~", Under Review.

[153] C. -H. Kim, M. -S. Kim, J. -B. Rhim, T. -I. Kim^*, H. -I. Kwon^*, and I. -J. Park^*, "Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic," Adv. Sci., accepted for publication.

[152] Y. -G. Jeong, C. -H. Kim, H. -M. Kim, G. -E. Kim, C. -E. Oh, G. -H. Kim, S. -B. Kim, and H. -I. Kwon^*, "Optimized O₂/Ar Mixed Plasma Treatment for Hydrpgen-Resistant and High Reliability IGZO Thin-Film Transistors," Semicond. Sci. Technol., vol. 41, no. 8, pp. 085007-1~085007-12, Aug. 2026.

[151] D. -H. Lee^†, J. -H. Hwang^†, C. -E. Oh, J. Ryu, J. -M. Jang, B. -D. Ahn, J. -U. Bae, and H. -I. Kwon^*, "Lateral Distribution of Electrical Defect Concentration in SA TG Coplanar IGZO TFTs Extracted via Low Frequency Noise Analysis," Sci Rep., vol. 16, pp. 27259-1~27259-10, Jun. 2026.

[150] J. -H. Hwang, H. -I. Kwon and S. -H. Song^*, "Effect of Aluminum Capping Layer Thickness on Scattering Mechanisms in a-IGTO Thin-Film Transistors," Phys. B: Condens. Matter, Vol 728, pp. 418398-1~418398-5, Apr. 2026.

[149] H. -W. Lee^†, S. -H. Lee^†, D. -H. Lee, C. -E. Oh, D. -H. Son, C. -H. Kim, C. -Y. Jeong, J. -M. Jang, B. -D. Ahn, J. -U. Bae, S. -H. Song^*, and H. -I. Kwon^*, "Investigation of PBTS-Induced Degradation Mechanism in SA TG Coplanar IGZO TFTs Using Low-Frequency Noise Analysis," IEEE J. Electron Devices Soc, vol. 14, pp. 36~40, Jan. 2026.

[148] D. -H. Son^†, C. -E. Oh^†, H. -W. Lee, C. -Y. Jeong, J. -M. Jang, B. -D. Ahn, J. -U. Bae, and H. -I. Kwon^*, "Analysis of Physical Mechanisms for Channel-Length-Dependent PBTS Reliability in SA TG Coplanar IGZO TFTs," Sci Rep., vol. 15, pp. 43556-1~43556-10, Dec. 2025.

[147] H. -W. Jang, G. -E Kim, M. -J. Kim, J. B. Rhim, T. -I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Strategic Defect Engineering at the Buried Interface for Metal-Halide Transistors," Mater. Horiz., vol. 12, pp. 10218~10230, Dec. 2025.

[146] G. -E. Kim, M. -J. Kim, T. I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Vacancy-modulated vertical heterojunction for high-performance self-driven photodetectors," Chem. Eng. J., vol. 523, pp. 168640-1~168640-12, Nov. 2025.

[145] C. -E. Oh^†, H. -S. Jeong^†, S. -H. Lee, H. -W. Lee, D. -H. Son, C. -H. Kim, M. -H. Kim, K. -S. Son, J. H. Lim, S. -H. Song^*, and H. -I. Kwon^*, "Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors," Sci. Rep., vol. 15, pp. 34660-1~34660-10, Oct. 2025.

[144] D. -J. Kim, K. -S. Yoo, C. -H. Lee, J. -M. Kim, D. -G. Kim, H. -W. Lee, H. -I. Kwon, and J. -S. Park^*, "High-throughput and performance InZnAlO thin film transistor on polyimide substrate via atmospheric pressure spatial atomic layer deposition," J. Alloys Compd., vol. 1023, pp. 180031-1~180031-8, Apr. 2025.

[143] S. -H. Lee^†, C. -E. Oh^†, D. -H. Lee, J. -H. Hwang, Y. -L. Han, Y. -H. Ko, C. -Y. Jeong, W. -S. Ryu, J. -Y. Noh, K. -S. Park, S. -H. Song^*, and H. -I. Kwon^*, "Modeling and Characterization of Low Frequency Noise in Self-Aligned Top-Gate Coplanar IGZO Thin-Film Transistor," Semicond. Sci. Technol. , vol. 39, no. 11, pp. 115019-1~115019-10, Nov. 2024.

[142] J. -Y. Lee, T. I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Surface Crystallization Effects on Tellurium Oxide Thin Films for Low-Power Complementary Logic Circuit Applications," Appl. Surf. Sci, vol. 669, pp. 160536-1~160536-12, Oct. 2024.

[141] Y. -G. Kim^†, C. -E. Oh^†, Y. -L. Han, D. -H. Lee, J. -Y. Lee, K. -S. Son, J. -H. Lim, I. -J. Park, S. -H. Song^*, and H. -I. Kwon^*, "Effects of indium composition ratio on electrical stability of top-gate self-aligned coplanar IGZO TFTs under self-heating stress conditions," J. Semicond. Tech. Sci, vol. 24, no. 4, pp. 379-386, Aug. 2024.

[140] C. -E. Oh, Y. -L. Han, D. -H. Lee, J. -H. Hwang, H. -S. Jeong, M. -H. Kim, K. -S. Son, S. Lee, S. -H. Song^*, and H. -I. Kwon^*, "Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications," IEEE J. Electron Devices Soc, vol. 12, pp. 564-568, Jul. 2024.

[139] H. -A. Lee, T. I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Effects of Solution Processable CuI Thin Films with Al₂O₃-Based Sandwiched Architecture for High-Performance p-Type Transistor Applications," J. Mater. Chem. C, vol. 12, pp.6457-6468, May 2024.

[138] J. S. Oh, T. I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Strain Modulation Effects on Two-Dimensional Tellurium for Advanced p-Type Transistor Applications," Appl. Surf. Sci, vol.651, pp.159288-1-159288-9, Apr. 2024.

[137] T. I. Kim^*, H. -A. Lee, H. -I. Kwon^*, and I. -J. Park^*, "Band Alignment of γ-Phase CuI/high-k Al₂O₃ Heterointerface by X-ray Photoelectron Spectroscopy," Surf. Interfaces, vol 46, pp. 104190-1-104190-9, Mar. 2024.

[136] Y. -H. Joo, J. -W. Choi, B. Hou, H. -I. Kwon, D. -S. Um^*, and C. -I. Kim^*, "Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma," Plasma Sci. Technol., vol 25, 105502-1-105502-6, Oct. 2023.

[135] S. -H. Lim, T. I. Kim, I. -J. Park^*, and H.-I. Kwon^*, "Synthesis of a Tellurium Semiconductor with an Organic-Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistor," ACS Appl. Electron. Mater., vol 5, 4816-4825, Sep. 2023.

[134] K. Yatsu, H. -A. Lee, I. -J. Park^*, and H. -I. Kwon^*, "Effects of High-Energy X-Ray Irradiation on the Electrical and Chemical Properties of In-Ga-Sn-O Thin Films with Al₂O₃ Passivation Layer for Thin-Film Transistor Applications," ACS Appl. Electron. Mater., vol 5, 2528-2537, Apr. 2023.

[133] S. -H. Lim, I. -J. Park^*, and H. -I. Kwon^*, "Effects of Rapid Thermal Annealing Temperature on NO₂ Gas Sensing Properties of p-Type Mixed Phase Tin Oxide Thin Films," Ceram Int, vol. 49, issue. 5, pp. 8478-8486, Mar. 2023.

[132] D. -H. Lee, H. -S. Jeong, Y. -G. Kim, M. -H. Kim, K. -S. Son, J. H. Lim, S. -H. Song^*, and H. -I. Kwon^*, "Quantitative Analysis of Channel Width Effects on Electrical Performance Degradation of Top-Gate Self-Aligned Coplanar IGZO Thin-Film Transistors under Self-Heating Stresses," J. Semicond. Tech. Sci., vol. 23, pp. 79-87, Feb. 2023.

[131] C. -E. Oh, H. -S. Jeong, S. -H. Lee, D. -H. Lee, Y. -G. Kim, M. -H. Kim, K. S. Son, J. H. Lim, S. -H. Song^*, and H. -I. Kwon^*, "Effects of Oxygen Content on Output Characteristics of IGZO TFTs under High Current Driving Conditions," J. Semicond. Tech. Sci., vol. 23, pp. 71-78, Feb. 2023. (Haedong Best Paper Award)

[130] H. -A. Lee, K. Yatsu, T. -I. Kim, H. -I. Kwon^*, and I. -J. Park^*, "Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors," ACS Appl. Mater. Interfaces, vol 14, 56416-56426, Dec. 2022.

[129] S. -G. Seo^†, J I. Baek^†, D. Mishra, H. B. Jo, H. -I. Kwon^*, and S. H. Jin^*, "One-pot Hydrothermal Growth of Indium Oxide-CNT Heterostructure via Single Walled Carbon Nanotube Scaffolds and Their Application toward Flexible NO₂ Gas Sensors," J. Alloys Compd., vol. 922, issue. 17, pp. 166169-1-166169-11, Nov. 2022.

[128] D. Kim^†, H. Park^†, T. Kim, J. -W. Lee, D. H. Jeong, H. -I. Kwon, B. J. Kim^*, and F. S. Kim^*, "Addition of Low-Molecular-Weight Batches Enhances ChargeTransport Properties of n-Type Polymer Semiconductors," Macromolecules, vol. 55, issue. 20, pp. 9039-9047, Oct. 2022.

[127] K. -H. Bae, S. -H. Lim. K. Yatsu, I. -J. Park^*, and H. -I. Kwon^*, "Effects of hydrogen plasma treatment on the physical and chemical properties of tin oxide thin films for ambipolar thin-film transistor applications," Ceram Int, vol. 48, issue. 17, pp. 24540-24549, Sep. 2022.

[126] K. Yatsu, H. -A. Lee, D. -H. Kim, I. -J. Park^*, and H. -I. Kwon^*, "Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-Ray Irradiation," ACS Appl. Electron. Mater., vol.4, pp.3606-3614, Jul. 2022.

[125] S. -J. Choi^†, J. -G. Park^†, S. -H. Hwang, C. -W. Kim, Y. -S. Kim, S. Oh, J. -H. Baeck, J. -U. Bae, J. -Y. Noh, S. -W. Lee, K. -S. Park, J. -J. Kim, S. -Y. Yoon, H. -I. Kwon^* and D. -H. Kim^*, "Excessive Oxygen Peroxide Model-Based Universal Analysis of Positive-Bias-Stress and Negative-Bias-Illumination-Stress Instabilities in Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors," Adv. Electron. Mater. vol.8, pp.2101062-1-2101062-9, May 2022.

[124] S. -H. Hwang, K. Yatsu, D. -H. Lee, I. -J. Park^* and H. -I. Kwon^*, "Effects of Al₂O₃ surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications," Appl. Surf. Sci, vol.578, pp.152096-1-152096-9, Mar. 2022.

[123] H. -S. Cha, S. -H. Hwang, D. -H. Kim H. -I. Kwon and S. -H. Song^*, "Wheatstone Bridge Based Offset Cancelling Method utilizing a JFET as a Voltage-Controlled Resistor," Measurement, vol. 186, pp.110128-1-110128-6, Dec. 2021.

[122] D. -H. Kim, H. -S. Jeong, D. -H. Lee, K. -H. Bae, S. -H. Lee, M. -H Kim, J. -H Lim, and H. -I. Kwon^*, "Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors," Coatings, vol. 11, 1192-1-1192- 11, Sep. 2021.

[121] D. -H. Lee, D. -H. Kim, H. -S. Jeong, S. -H. Hwang, S. -H. Lee, M. -H. Kim, J. -H. Lim and H. -I. Kwon^* "Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance-Voltage and Current-Voltage Characteristics," Coatings, vol.11, pp.1135-1-1135-9, Sep. 2021.

[120] H. -S. Jeong, H. -S. Cha, S. -H. Hwang, D. -H. Lee,S. -H. Song^* and H. -I. Kwon^*, "Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition," Coatings, vol .11, pp. 698-1-698-10, Jun. 2021.

[119] D. -H. Kim^†, H. -S. Cha, H. -S. Jeong, S. -H. Hwang and H. -I. Kwon^*, "Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistors," Electronics, vol .10, pp. 1295-1-1295-10, May. 2021.

[118] M. -G. Shin, S. -H. Hwang, H. -S. Cha, H. -S. Jeong, D. -H. Kim and H. -I. Kwon^*, "Effects of proton beam irradiation on the physical and chemical properties of IGTO thin films with different thicknesses for thin-film transistor applications," Sufaces and Interfaces, vol. 23, pp.100990-1-100990-7, Apr. 2021.

[117] H. -S. Cha, H. -S. Jeong, S. -H. Hwang, D. -H. Lee and H. -I. Kwon ^*, "Electrical Performance and Stability Improvements of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors using an Oxidized Aluminum Capping Layer of Optimal Thickness," Electronics, vol. 9, pp. 2196-1-2196-10, Dec. 2020.

[116] K. -H. Bae, M. -G. Shin, S. -H. Hwang, H. -S. Jeong, D. -H. Kim and H. -I. Kwon ^*, "Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al₂O₃ Capping Layer," IEEE Access, vol. 8, pp. 222410-222416, Dec. 2020.

[115] H. -S. Jeong, H. S. Cha, S. H. Hwang and H. -I. Kwon ^*, "Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors," Electronics, vol. 9, pp. 1875-1-1875-10, Nov. 2020.

[114] M. -G. Shin, K. -H. Bae, H. -S. Jeong, D. -H. Kim, H. -S. Cha and H. -I. Kwon ^*, "Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors," Micromachines, vol. 11, pp. 917-1-917-12, Sep. 2020.

[113] H. -J. Joo, D. -H. Kim, H. -S. Cha, and S. -H. Song^*, "Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films," Micromachines, vol. 11, pp. 822-1-822-10, Aug. 2020.

[112] D. Ho, H. -Y. Jeong, M. N. Le, H. Usta, H. -I. Kwon, M. -G. Kim ^* and C. -I. Kim ^*, "Microstructural Modulation of Organic Passivation Layers for Metal Oxide Semiconductors to Achieve High Bias Stability," J. Mater. Chem. C, vol. 8, pp. 11209-11222, Jul. 2020.

[111] M. -G. Shin, K. -H. Bae, H. -S. Cha, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon ^*, "Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors," Materials, vol. 13, pp. 3055-1-3055-9, Jul. 2020.

[110] B. H. Lee, S. -Y. Hong, D. -H. Kim, S. S. Kim, H. -I. Kwon, and S. Y. Lee ^*, "Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors," PHYSICA B, vol. 574, pp. 311629-1-311629-6, Dec. 2019.

[109] H. -J. Joo, M. -G. Shin, H. -Y. Jung, H. -S. Cha, D. U. Nam, and H. -I. Kwon^*, "Oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations," Materials, vol. 12, pp. 3815-1-3815-11, Nov. 2019.

[108] Y. J. Seo, H. -S. Jeong, H. -Y. Jeong, S. Y. Park, J. T. Jang, S. J. Choi, D. M. Kim, S. -J. Choi, X. Jin, H. -I. Kwon^*, D. H. Kim^*, "Effect of simultaneous mechanical and electrical stress on the electrical performance of flexible In-Ga-Zn-O thin-film transistors," Materials, vol. 12, pp. 3248-1-3248-8, Oct. 2019.

[107] H. -J. Joo, M. -G. Shin, S. -H. Kwon, H. -Y. Jeong, H. -S. Jeong, D. -H. Kim, X. Jin, S. -H. Song, and H. -I. Kwon^*, "High-Gain Complementary Inverter Based on Corbino p-type Tin Monoxide and n-type Indium-Gallium-Zinc Oxide Thin-Film Transistors," IEEE Electron Device Lett., vol. 40, no. 10, pp. 1642-1645, Oct. 2019.

[106] H. -Y. Jeong, S. -H. Kwon, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon^*, "Radiation-Tolerant P-type SnO Thin-Film Transistors," IEEE Electron Device Lett., vol. 40, no. 7, pp. 1124-1127, Jul. 2019.

[105] M. -J. Park, H. -S. Jeong, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon^*, "Improvement of NO₂ gas-sensing properties in InGaZnO thin-film transistors by a pre-biasing measurement method," Semicond. Sci. Technol., vol. 34, no. 6, pp. 065010-1-065010-10, Jun. 2019.

[104] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon^*, "Highly sensitive and selective room-temperature NO₂ gas sensing characteristics of SnOx-based p-type thin-film transistor," Sensors and Actuators B, vol. 288, pp. 625-633, Jun. 2019.

[103] S. -Y. Hong, H. -J. Kim, D. -H. Kim, H. -Y. Jeong, S. -H. Song, I. -T. Cho, J. Y. Noh, P. S. Yun, S. -W. Lee, K. -S. Park, S. Y. Yoon, I. B. Kang, and H. -I. Kwon^*, "Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors," Sci. Rep., vol. 9, pp. 6588-1-6588-11, Apr. 2019.

[102] K. H. Kim, H. -I. Kwon, S. J. Kwon, and E. -S. Cho^*, "Xenon Flash Lamp Annealing on a-IGZO Thin-film Transistors at Different Pulse Repetition Numbers," J. Semicond. Tech. Sci., vol. 19, no. 2, pp. 178-183, Apr. 2019.

[101] Y. Zhang, S. Hosono, N. Nagai, S. -H. Song, and K. Hirakawa^*, "Fast and sensitive bolometric terahertz detection at room temperature through thermomechanical transduction," Journal of Applied Physics, vol. 125, issue 15, pp. 151602-1-151602-6, Mar. 2019.

[100] S. -H. Kwon, H. -J. Joo and H. -I. Kwon^*, "Effects of simultaneous ultraviolet and thermal treatments on physical and chemical properties of RF-sputtered p-type SnO thin-films," Ceram Int, vol. 44, issue. 17, pp. 20883-20889, Dec. 2018.

[99] I. H. Kwon, H. -I. Kwon, and I. H. Cho^*, "Development of high temperature operation silicon based MOSFET for harsh environment application," Results in Physics, vol. 11, pp. 475-481, Dec. 2018.

[98] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, S. -H. Song^*, and H. -I. Kwon^*, "Low temperature NO₂ sensing properties of RF-sputtered SnO-SnO₂ heterojunction thin-film with p-type semiconducting behavior," Ceram Int, vol. 44, issue. 14, pp. 17283-17289, Oct. 2018.

[97] R. K. Mishra, J. -H. Ryu, H. -I. Kwon^*, and S. H. Jin^*, "A new strategy for integrating semiconducting SWCNTs into pseudo-cubic In₂O₃ heterostructures for solid-state symmetric supercapacitors with a superior stability and specific capacitance," J. Mater. Chem. A, vol. 6, issue. 31, pp. 15253-15264, Aug. 2018.

[96] J. H. Ryu^†, G. -W. Baek^†, S. Y. Kim, H. -I. Kwon^*, and S. H. Jin^*, "Spray-Coated Single Walled Carbon Nanotubes as Source and Drain Electrodes in SnO Thin-Film Transistors," Semicond. Sci. Technol., vol. 33, no. 7, pp. 075013-1-075013-7, Jul. 2018.

[95] R. K. Mishra, J. -H. Ryu, H. -I. Kwon^*, and S. H. Jin^*, "Novel two-dimensional In₂O₃ nanodiscs for high-rate performance of solid-state symmetric supercapacitors," Materials Letters, vol. 218, no. 1, pp. 131-134, May 2018.

[94] S. M. Kwon, J. K. Won, J. -W. Jo, J. H. Kim, H. -J. Kim, H. -I. Kwon, J. K. Kim, S. D. Ahn, Y. -H. Kim, M. -J. Lee, H. -I. Lee, T. J. Marks^*, M. -G. Kim^*, and S. K. Park^*, "High-Performance and Scalable Metal-Chalcogenide Semiconductors and Devices via Chalco-Gel Routes," Science Advances, vol. 4, no. 4, eaap9104, Apr. 2018.

[93] M. Wu, J. M. Shin, Y. K. Hong, D. K. Jang, X. Jin, H. -I. Kwon, and J. -H. Lee^*, "An FET-Type Gas Sensor with a sodium ion conducting solid electrolyte for CO₂ detection," Sensors and Actuators B, vol. 259, no. 15, pp. 1058-1065, Apr. 2018.

[92] J. M. Shin, Y. K. Hong, M. Wu, J. H. Bae, H. -I. Kwon^*, B. -G. Park, and J. -H. Lee^*, "An Accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS₂ as a sensing layer by pulse measurement," Sensors and Actuators B, vol. 258, no. 1, pp. 574-579, Apr. 2018.

[91] R. K. Mishra, S. Manivannan, K. W. Kim, H. -I. Kwon^*, and S. H. Jin^*, "Petal-like MoS₂ Nanostructures with Metallic 1T Phase for High Performance Supercapacitors," Curr. Appl. Phys., vol. 18, pp. 345-352, Mar. 2018.

[90] R. K. Mishra, G. W. Baek, K. W. Kim, H. -I. Kwon^*, and S. H. Jin^*, "One-step solvothermal synthesis of carnation flower-like SnS₂ as superior electrodes for supercapacitor application," Appl. Surf. Sci., vol. 425, pp. 923-931, Dec. 2017.

[89] W. Y. Choi^*, H. -I. Kwon, and K. Y. Kim, "Lateral Nanoelectromechanical Relays for Reconfigurable Logic," J. Nanoelectron. Optoelectron., vol. 12, pp. 1402-1405, Dec. 2017.

[88] D. -H. Kim, M. -J. Park, and H. -I. Kwon^*, "Separate Extraction of Densities of interface and Bulk Trap States in High-Mobility ZnON Thin-Film Transistors," J. Nanoelectron. Optoelectron., vol. 12, pp. 1263-1266, Nov. 2017.

[87] C. -H. Lee, C. -H. Hong, Y. -B. Na, J. -J. Park, H. -I. Kwon^*, and W. -S. Cheong^*, "Design of Cell-Patterns for Large-Sized Window Unified Touch Screen Panels with High Sensitivity," J. Nanosci. Nanotechnol., vol. 17, no. 11, pp. 7865-7868, Nov. 2017.

[86] H. -I. Kwon^*, "Investigation of Carrier Transport Mechanism in p-Type Tungsten Diselenide Field-Effect Transistors," J. Nanoelectron. Optoelectron., vol. 12, pp. 1137-1140, Oct. 2017.

[85] H. -I. Kwon^*, "High-Performance Hybrid Complementary Inverter with N-type InGaZnO and P-type WSe₂ Thin-Film Transistors," J. Nanoelectron. Optoelectron., vol. 12, pp. 1119-1122, Oct. 2017.

[84] I. S. Hwang^†, J. H. Kim^†, M. K. Lee, M. -W. Lee, H. -J. Kim, H. -I. Kwon, D. K. Hwang, M. G. Kim, H. Y. Yoon, Y. -H. Kim^*, and S. -K. Park^*, "Wide-spectral/dynamic-range skin-compatible phototransistors enable by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors," Nanoscale, vol. 9, pp. 16711-16721, Nov. 2017.

[83] D. -H. Kim, M. J. Park, and H. -I. Kwon^*, "Effect of channel layer thickness on electrical and thermal stabilities of high-mobility zinc oxynitride thin-film transistors," ECS J. Solid State Sci. Technol., vol. 6, no. 11, pp. Q109-Q113, Sep. 2017.

[82] J. -H. Ji, U. -C. Moon, H. -I. Kwon^*, and J. -H. Koh^*, "The two-step sintering effect on the dielectric and piezoelectric properties of (Na,K)NbO₃-BiScO₃ lead-free ceramics," Ceram. Int., vol. 43, no. 1, pp. S97-S101, Aug. 2017.

[81] Md. M. I. Khan^†, G. W. Baek^†, K. Kim, H. -I. Kwon^*, and S. H. Jin^*, "Simultaneous detection of dopamine and uric acid on indium tin oxides modified with cost-effective gas-phase synthesized single walled carbon nanotubes," Electroanalysis, vol. 29, no. 8, pp. 1925-1933, Aug. 2017.

[80] C. -Y. Jeong, H. -J. Kim, S. -Y. Hong, S. -H. Song, and H. -I. Kwon^*, "Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous In-Ga-Zn-O thin-film transistors," Jpn. J. Appl. Phys., vol. 56, pp. 080301-1-080301-4, Aug. 2017.

[79] S. -D. Bae, S. -H. Kwon, H. -S. Jeong, and H. -I. Kwon^*, "Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments," Semicond. Sci. Technol., Vol. 32, no. 7, pp. 075006-1-075006-7, Jun. 2017.

[78] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon^*, "Enhanced Electrical Performance and Stability in Zinc Oxynitride Thin-Film Transistors via Sequential Ultraviolet and Thermal Treatment," IEEE Electron Device Lett., vol. 38, no. 7, pp. 883-886, Jul. 2017.

[77] H. -J. Kim, S. -Y. Hong, D. -H. Kim, H. -S. Jeong, and H. -I. Kwon^*, "Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors," J. Vac. Sci. Technol. B., vol. 35, no. 3, pp. 030602-1-030602-6, May/Jun. 2017.

[76] J. -W. Yang, Y. -B. Na, J. -H. Shin, C. -H. Hong, W. -H. Seo, K. -H. Kim, C. -W. Song, S. -H. Song, H. -I. Kwon, and W. -S. Cheong^*, "Effects of Er-Doping on Amorphous InZnSnO/InZnSnO:Er Double-Channel Thin-Film Transistors," J. Nanosci. Nanotechnol. vol. 17, no. 5, pp. 3415-3419, May 2017.

[75] W. -H. Seo, C. -H. Hong, J. -W. Yang, Y. -B. Na, H. -I. Kwon^*, and W. -S. Cheong^*, "Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator," J. Nanosci. Nanotechnol. vol. 17, no. 5, pp. 3089-3091, May 2017.

[74] C. -Y. Jeong, H. -J. Kim, J. -H. Lee, and H. -I. Kwon^*, "Experimental Investigation of Physical Mechanism for Asymmetrical Degradation in Amorphous InGaZnO Thin-Film Transistors under Simultaneous Gate and Drain Bias Stresses," J. Semicond. Tech. Sci., vol. 17, no. 2, pp. 239-244, Apr. 2017.

[73] H. -J. Kim, D. -H. Kim, C. -Y. Jeong, J. -H. Lee, and H. -I. Kwon^*, "Determination of Interface and Bulk Trap Densities in High-Mobility P-type WSe₂ Thin-Film Transistors," IEEE Electron Device Lett., vol. 38, no. 4, pp. 481-484, Apr. 2017.

[72] H. -J. Kim, C. -Y. Jeong, S. -D. Bae, J. -H. Lee, and H. -I. Kwon^*, "Charge Transport Mechanism in P-Channel Tin Monoxide Thin-Film Transistors," IEEE Electron Device Lett., vol. 38, no. 4, pp. 473-476, Apr. 2017.

[71] J. I. Kim, C. -Y. Jeong, H. -I. Kwon, K. D. Jung, M. S. Park, K. -H. Kim, M. S. Seo, and J. -H. Lee^*, "Modeling of asymmetric degradation based on non-uniform electric field and temperature in amorphous In-Ga-Zn-O thin film transistors," Semicond. Sci. Technol., vol. 32, no. 3, pp. 035017-1-035017-7, Mar. 2017.

[70] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon^*, "Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure," Nanotechnology, vol. 28, no. 9, pp. 095207-1-095207-6, Mar. 2017.

[69] D. -H. Kim, H. -S. Jeong, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon^*, "Effects of oxygen flow rate on the electrical stability of zinc oxynitride thin-film transistor," Jpn. J. Appl. Phys., vol. 56, pp. 020301-01-020301-04, Feb. 2017.

[68] H. -J. Kim, C. -Y. Jeong, S. -D. Bae, and H. -I. Kwon^*, "Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors," J. Vac. Sci. Technol. B., vol. 35, no. 1, pp. 010601-1-010601-6, Jan./Feb. 2017.

[67] C. -Y. Jeong, H. -J. Kim, D. -H. Kim, H. -S. Kim, T. S. Kim, J. -B. Seon, S. Lee, D. H. Kim^*, and H. -I. Kwon^*, "Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 1570-1573, Dec. 2016.

[66] C. -Y. Jeong, H. -J. Kim, J. I. Kim, J. -H. Lee, and H. -I. Kwon^*, "Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors," J. Vac. Sci. Technol. B. vol. 34, pp. 060601-1-060601-4, Nov./Dec. 2016.

[65] M. -K. Eo and H. -I. Kwon^*, "Effects of Undoped GaN Capping Layer on p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors," J. Nanosci. Nanotechnol. vol. 16, pp. 11386-11390, Nov. 2016.

[64] C. -Y. Jeong, J. -H. Lee, Y. -J. Choi, C. -W. Lee, S. -H. Song, and H. -I. Kwon^*, "Low-Frequency Noise Properties in P-Type SnO Thin-Film Transistors," J. Nanosci. Nanotechnol. vol. 16, pp. 11381-11385, Nov. 2016.

[63] Y. -J. Yoon, J. H. Seo, H. -I. Kwon^*, J. -H. Lee, and I. -M. Kang^*, "Enhancement-Mode GaN-Based Junctionless Vertical Surrounding-Gate Transistor with Dual-Material Gate Structure for High-Frequency Applications," J. Nanosci. Nanotechnol. vol. 16, pp. 10204-10209, Oct. 2016.

[62] J. H. Seo, Y. J. Yoon, Y. -W. Jo, D. -H. Son, S. Cho, H. -I. Kwon^*, J. -H. Lee, and I. M. Kang^*, "Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)," J. Nanosci. Nanotechnol. vol. 16, pp. 10199-10203, Oct. 2016.

[61] J. -H. Lee, Y. -J. Choi, C. -Y. Jeong, C. -W. Lee, and H. -I. Kwon^*, "Temperature-Dependent Electrical Instability of p-type SnO Thin-Film Transistors," J. Vac. Sci. Technol. B. vol. 34, pp. 041210-1-041210-6, Jul./Aug. 2016.

[60] H. R. Eun, Y. J. Yoon, J. H. Seo, M. S. Cho, J. -H. Lee, H. -I. Kwon^*, and I. M. Kang^*, "Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer," Current Appl. Phys., vol. 16, pp. 681-685, Jul. 2016.

[59] H. Jeong, H. -S. Jeong, D. -H. Kim, C. -Y. Jeong, and H. -I. Kwon^*, "Effects of Post-Deposition Thermal Annealing Temperature on Electrical Properties of ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 747-750, Jun. 2016.

[58] C. -Y. Jeong, H. -J. Kim, D. -H. Kim, H. -S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J. -B. Seon, K. S. Son, S. Lee, S. -H. Cho, Y. S. Park, D. H. Kim^*, and H. -I. Kwon^*, "Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 739-742, Jun. 2016.

[57] Y. J. Yoon, J. H. Seo, S. Cho, H. -I. Kwon, J. -H. Lee, and I. M. Kang^*, "Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10nm tunneling field-effect transistors," Jpn. J. Appl. Phys., vol. 55, pp. 06GG02-01-06GG02-05, Apr. 2016.

[56] J. S. Heo, J. -W. Jo, J. Kang, C. -Y. Jeong, H. Y. Jeong, S. K. Kim, K. Kim, H. -I. Kwon, J. Kim, Y. -H. Kim, M. -G. Kim^*, and S. -K. Park^*, "Water-Mediated Photochemical Treatments for the Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors," ACS Appl. Mater. Interfaces., vol. 8, pp. 10403-10412, Apr. 2016.

[55] Y. J. Yoon, J. H. Seo, S. Cho, H. -I. Kwon, J. -H. Lee, and I. M. Kang^*, "Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications," J. Semicond. Tech. Sci., vol. 16, pp. 172-178, Apr. 2016.

[54] C. -W. Song, K. -H. Kim, J. -W. Yang, D. -H. Kim, Y. -J. Choi, C. -H. Hong, J. -H. Shin, H. -I. Kwon, S. -H. Song*, and W. -S. Cheng^*, "Effects of Mg suppressor layer on the InZnSnO thin-film transistors," J. Semicond. Tech. Sci., vol. 16, pp. 198-203, Apr. 2016.

[53] J. -H. Lee, Y. -J. Choi, C. -Y. Jeong, D. -K. Jung, S. Ham, and H. -I. Kwon^*, "Electrical Instability of P-Channel SnO Thin-Film Transistors under Light Illumination," IEEE Electron Device Lett., vol. 37, pp. 295-298, Mar. 2016.

[52] C. -Y. Jeong, J. I. Kim, J. -H. Lee, J. -G. Um, J. Jang, and H. -I. Kwon^*, "Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method," IEEE Electron Device Lett., vol. 36, pp. 1332-1335, Dec. 2015.

[51] Y. I. Jang, J. H. Seo, Y. J. Yoon, H. R. Eun, R. H. Kwon, J. -H. Lee, H. -I. Kwon^*, and I. M. Kang^*, "Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor," J. Semicond. Tech. Sci., vol. 15, pp. 554-562, Oct. 2015.

[50] Y. -J. Han, Y. -J. Choi, H. Jeong, and H. -I. Kwon^*, "Investigation of intrinsic electrical characteristics and contact effects in p-type tin monoxide thin-film transistors using gated-four-probe measurements," J. Nanosci. Nanotechnol., vol. 15, pp. 7582-7585, Oct. 2015.

[49] X. Jin^*, M. Wu, X. Liu, R. Chuai, H. -I. Kwon, J. -H. Lee, and J. -H. Lee, "A Novel High Performance Junctionless FETs with Saddle-Gate," J. Comput. Electron., vol. 14, pp. 661-668, Sep. 2015.

[48] C. -Y. Jeong, D. Lee, Y. -J. Han, Y. -J, Choi, and H. -I. Kwon^*, "Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics," Semicond. Sci. Technol., vol. 30, pp. 085004-1-085004-6, Jun. 2015.

[47] Y. -J. Choi, Y. -J. Han, C. -Y. Jeong, S. -H. Song, G. W. Baek, S. H. Jin^*, and H. -I. Kwon^*, "Enhancement mode p-channel SnO thin-film transistors with dual-gate structures," J. Vac. Sci. Technol. B., Vol. 33, pp. 041203-1-041203-5, Jul./Aug. 2015.

[46] H. -S. Choi, H. Jeong, J. -H. Lee, and H. -I. Kwon^*, "Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field-Effect Transistors Under Various Off-Stress Conditions," J. Nanoelectron. Optoelectron., vol. 10, pp. 397-401, Jun. 2015.

[45] J. I. Kim, I. -T. Cho, C. -Y. Jeong, D. Lee, H. -I. Kwon, K. D. Jung, M. S. Park, M. S. Seo, T. Y. Kim, J. H. Lee, and J. -H. Lee^*, "Local-Degradation-Induced Threshold Voltage Shift in Turned-off Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress," IEEE Electron Device Lett., vol. 36, pp. 579-581, Jun. 2015.

[44] C. -Y. Jeong, D. Lee, J. I. Kim, S. -H. Song, J. -H. Lee, J. -G. Um, J. Jang, and H. -I. Kwon^*, "Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors," J. Vac, Sci.Technol. B., vol 33, pp. 030603-1-030603-5, May/Jun. 2015.

[43] Y. -J. Han, Y. -J. Choi, C. -Y. Jeong, D. Lee, S. -H. Song, and H. -I Kwon^*, "Environment-Dependent Bias Stress Stability of P-type SnO Thin-Film Transistors," IEEE Electron Device Lett., vol. 36, pp. 466-468, May 2015.

[42] H. -S. Choi and S. -H. Song^*, "Robust Optical Detection Method for the Vibrational Mode of a tuning Fork Crystal Oscillator," J. Sensor Sci. & Tech. vol. 24, pp. 1-3, Mar. 2015.

[41] H. -S. Choi, M. U, C. -Y. Jeong, H. -I Kwon, and S. -H. Song^*, "Displacement Sensitivity Comparison between the First Two Symmetrical In-Plane Modes of a Tuning Fork Crystal Oscillator by Using an Optical Chopping Mehtod," J. Korean Phys. Soc., vol. 66, pp. 744-747, Mar. 2015.

[40] D. Lee, C. -Y. Jeong, S. -H. Song, X. -S. Jin, J. I. Kim, J. -H. Lee, and H. -I. Kwon^*, "Asymmetrical Degradation Behaviors in Amorphous InGaZnO Thin-Film Transistors Under Simultaneous Gate and Drain Bias Stress," J. Vac. Sci. Technol. B, vol 33, pp.011202-1-011202-8, Jan./Feb. 2015.

[39] Y. -J. Han, Y. -J. Choi, I. -T. Cho, S. H. J, J. -H. Lee, and H. -I. Kwon, "Improvement of Long-Term Durability and Bias Stress Stability in P-type SnO Thin-Film Transistors Using a SU-8 Passivation Layer," IEEE Electron Device Lett., vol. 35, pp. 1260-1262, Dec. 2014.

[38] M. U, Y. -J. Han, S. -H. Song, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, "High performance p-type SnO thin-film transistors with SiOx gate insulator deposited by low-temperature PECVD method," J. Semicond. Tech. Sci., vol. 14, pp. 666-672, Oct. 2014.

[37] S. Y. Jang, J. -H. Shin, E. J. Hwang, H. -S. Choi, H. Jeong, S. -H. Song, and H. -I. Kwon, "Investigation of buffer traps in AlGaN/GaN Heterostructure field-effect transistors using a simple structure," J. Semicond. Tech. Sci., vol. 14, pp. 478-483, Aug. 2014.

[36] M. U, I. -T. Cho, S. H. Jin, J. -H. Lee, and H. -I. Kwon, "Effects of active layer deposition temperature on the electrical performance of p-type SnO thin-film transistors," J. Korean Phys. Soc., vol. 65, pp. 286-290, Aug. 2014.

[35] J. I. Kim, K. -S. Chang, D. U. Kim, I. -T. Joe, C. -Y. Jeong, D. Lee, H. -I. Kwon, S. H. Jin, and J. -H. Lee*, "Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors," Appl. Phys. Lett., vol. 105, pp. 043501-1-082103-4, July 2014.

[34] J. I. Kim, I. -T. Cho, S. -M. Joe, C. -Y. Jeong, D. Lee, H. -I. Kwon, S. H. Jin*, and J. -H. Lee*, "Effect of Temperature and Electric Field on Degradataion in Amorphous InGaZnO TFTs under Positive Gate and Drain Bias Stress," IEEE Electron Device Lett., vol. 35, no. 4, pp. 458-460, Apr. 2014.

[33] C. -Y. Jeong, D. Lee, S. -H. Song, J. I. Kim, J. -H. Lee, and H. -I. Kwon, "A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization," Semicond. Sci. Technol., vol. 29. pp. 045023-1-045023-6, Apr. 2014.

[32] I. -T. Cho, M. U, S. -H. Song, J. -H. Lee*, and H. -I. Kwon, "Effects of air annealing on the electrical properties of p-type tin monoxide thin-film-transistors," Semicond. Sci. Technol., vol. 29. pp. 045001-1-045001-6, Apr. 2014.

[31] J. C. Park, I. -T. Cho, E. -S. Cho, D. H. Kim, C. -Y. Jeong, and H. -I. Kwon, "Comparative Study of ZrO2 and HfO2 as a High-k Dielectric for Amorphous InGaZnO Thin Film Transistors," J. Nanoelectron. Optoelectron. vol. 9, no. 1, pp.67-70, Feb. 2014.

[30] C. -Y. Jeong, D. Lee, S. -H. Song, I.-T. Cho, J. -H. Lee, E. -S. Cho, and H. -I. Kwon, “Border trap characterization in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX gate dielectrics,” Appl. Phys. Lett. vol. 103, no. 14, pp. 142104-1-142104-5, Oct. 2013.

[29] M. Bae, K. M. Lee, E. -S. Cho, H. -I. Kwon, D. M. Kim, and D. H. Kim*, "An Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3465-3473, Oct. 2013.

[28] M. Wu, X. Jin*, H. -I. Kwon, R. Chuai, and J. -H. Lee, "The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling," J. Semicond. Tech. Sci., vol. 13, pp. 245-251, June 2013.

[27] B. -K. Choi, M. -K. Jeong, H. -I. Kwon, B. -G. Park, and J. -H. Lee*, "Current-Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner," Jpn. J. Appl. Phys., vol. 52, pp. 064202-1-064202-8, June 2013.

[26] I. -J. Park, C. -Y. Jeong, M. U, S. -H. Song, I. -T. Cho, J. -H. Lee, E. -S. Cho, and H. -I. Kwon, ”Bias-stress-induced instabilities in p-type Cu2O thin-film transistors,” IEEE Electron Device Lett., vol. 34, no. 5, pp. 647-649, May 2013.

[25] X. Jin*, X. Liu, H. -I. Kwon, J. -H. Lee, and J. -H. Lee, "A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure," Solid State Electron., vol. 82, pp. 77-81, Apr. 2013.

[24] Jin. X*. -S, Liu. X, H. -I. Kwon, and Lee. J. -H, "A continuous current model of accumulation mode (junctionless) cylindrical surrounding-gate nanowire MOSFETs," Chin. Phys. Lett., vol. 30, no. 3, pp. 038502-1-038502-4, Mar. 2013.

[23] C. -Y. Jeong, J. Sohn, S. -H. Song, I. -T. Cho, J. -H. Lee, E. -S. Cho, and H. –I. Kwon, "Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors," Appl. Phys. Lett., vol. 102, pp. 082103-1-082103-4, Feb. 2013.

[22] J. Sohn, S. -H. Song, D. -W. Nam, I. -T. Cho, E. -S. Cho, J. -H. Lee*, and H. -I. Kwon,”Effects of vacuum annealing on the optical and electrical properties of p-type copper oxide thin-film transistors,” Semicond. Sci. Technol., vol. 28, pp. 015005-1-015005-5, Jan. 2013.

[21] I. -T. Cho, J. -W. Lee, J. -M. Park, W. -S. Park, C. -S. Hwang, J. -S. Kwak, I. -H. Cho, H. -I. Kwon, H. Shin, B. -G. Park, and J. -H. Lee*, ”Full-swing a-IGZO inverter with a depletion load using negative bias instability under light illumination,” IEEE Electron Device Lett., vol. 33, no. 12, pp. 1726-1728, Dec. 2012.

[20] D. -W. Nam, I. -T. Cho, J. -H. Lee*, E. -S. Cho, J. Sohn, S. -H. Song, and H. -I. Kwon, “Active layer thickness effects on the structural and electrical properties of p-type Cu₂O thin-film transistors,” J. Vac. Sci. Technol. B., vol. 30, pp. 060605-1–060605-5, Nov./Dec. 2012.

[19] S. -H. Song, S. Kang, K. Park, S. Shin, and H. Kim*, "Applications of MEMS-MOSFET hybrid switches to power management circuits for energy harvesting systems," J. Power Electron., vol. 12, no. 6, pp. 954-959, Nov. 2012.

[18] C. -Y. Jeong, I. -J. Park, I. -T. Cho, J. -H. Lee, E. -S. Cho, M. K. Ryu, S. -H. K. Park, S. -H. Song, and H. -I. Kwon, “Investigation of the low-frequency noise behavior and its correlation with the subgap density of states and bias-induced instabilities in amorphous InGaZnO thin-film transistors with various oxygen flow rates,” Jpn. J. Appl. Phys., vol. 51, pp. 100206-1-100206-3, Oct. 2012.

[17] J. -K. Lee, S. Jung, J. Park, S. -W. Chung, J. S. Roh, S. -J. Hong, I. H. Cho, H. -I. Kwon, C. H. Park, B. -G. Park, and J. -H. Lee*, "Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices," Appl. Phys. Lett., vol. 101, pp. 103506-1-103506-4, Aug. 2012.

[16] I. -J. Park, C. -Y. Jeong, I. -T. Cho, J. -H. Lee, E. -S. Cho, S. J. Kwon, B. Kim, W. -S. Cheong, S. -H. Song, and H. -I. Kwon, "Fabrication of amorphous InGaZnO thin film transistor-driven flexible thermal and pressure sensors," Semicond. Sci. Technol., vol. 27, pp. 105019-1-105019-6, Aug. 2012.

[15] C. -Y. Jeong, J. Sohn, H. -I. Kwon, and S. -H. Song, “Passivation of the exposed silver electrodes on a tuning fork crystal oscillator by chronoamperometry,” Jpn. J. Appl. Phys., vol. 51, pp. 090202-1-090202-3, Sep. 2012.

[14] J. -K. Lee, I. -T. Cho, H. -I. Kwon, C. S. Hwang, C. H. Park, and J. -H. Lee*, "Relation between conduction mechanism and low-frequency noise in polycrystalline TiOX-based resistive-switching memory devices," IEEE Electron Device Lett., vol. 33, no. 7, pp. 1063-1065, July 2012.

[13] I. -T. Cho, I. -J. Park, D. Kong, D. H. Kim, J. -H. Lee, S. -H. Song, and H. -I. Kwon,”Extraction of the channel mobility in InGaZnO TFTs using multifrequency capacitance-voltage Method,” IEEE Electron Device Lett., vol. 33, no. 6, pp. 815-817, June 2012.

[12] S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. -K. Bae, J. -H. Lee, B. D. Ahn, S. Y. Park, J. -H. Park, J. Park, H. -I. Kwon, D. M. Kim, and D. H. Kim*, ”Impact of oxygen flow rate on the instability under positive bias stress in dc-sputtered amorphous indium-gallium-zinc-oxide thin-film transistors,” IEEE Electron Device Lett., vol. 33, no. 1, pp. 62-64, Jan. 2012.

[11] D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H. -I. Kwon, “A Physical parameter-based SPICE models for InGaZnO thin film transistors applicable to process optimization and robust circuit design,” IEEE Electron Device Lett., vol. 33, no. 1, pp. 59-61, Jan. 2012.

[10] Y. M. Kim, I. H. Cho, H. -I. Kwon, and J. -H. Lee*, “Effects of Body Doping in a NAND Flash String without Source/Drain,” Jpn. J. Appl. Phys., vol. 50, pp. 114201-1-114201-4, Nov. 2011.

[9] D. -H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H. -I. Kwon, “AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter,” Jpn. J. Appl. Phys., vol. 50, pp. 090202-1-090202-3, Sep. 2011.

[8] J. -K. Lee, H. -J. Chung, J. Heo, S. Seo, I. H. Cho, H. -I. Kwon, and J. -H. Lee* "Reliability of bottom gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition," Appl. Phys. Lett., vol. 98, pp. 193504-1-193504-3, May 2011.

[7] J. -K. Lee, J. -W. Lee, J. Park, S. -W. Chung, J. S. Roh, S. -J. Hong, I. -H. Cho, H. -I. Kwon, and J. -H. Lee*, "Extraction of trap location and energy from random telegraph noise in amorphous TiOX resistance random access memories," Appl. Phys. Lett., vol. 98, pp. 143502-1-143502-3, Apr. 2011.

[6] J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I. -T. Cho and H. -I. Kwon, "Impact of high-k HfO2 dielectric on the low-frequency noise behaviors in amorphous InGaZnO thin film transistors," Jpn. J. Appl. Phys., vol. 49, pp. 100205-1-100205-3, Oct. 2010.

[5] B. -K. Choi, M. -K. Jeong, H. -I. Kwon, and J. -H. Lee*, "Analytic oxide capacitance model of double and surrounding gate metal-oxide-semiconductor field effect transistors in linear region by considering inversion-layer capacitance," Jpn. J. Appl. Phys., vol. 49, pp. 104201-1-104201-6, Oct. 2010.

[4] J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I. -T. Cho and H. -I. Kwon, "Low frequency noise in amorphous indium-gallium-zinc oxide thin film transistors from subthreshold to saturation," Appl. Phys. Lett., vol. 97, pp. 122104-1-122104-3, Sep. 2010.

[3] S. -M. Joe, J. -H. Yi, S. -K. Park, H. -I. Kwon, and J. -H. Lee*, “Position-dependent threshold-voltage variation by random telegraph noise in NAND flash memory strings,” IEEE Electron Device Lett., vol. 31, no. 7, pp. 635-637, July 2010.

[2] J. -K. Lee, H. Y. Jeong, I. -T. Cho, J. Y. Lee, S. -Y. Choi, H. -I. Kwon, and J. -H. Lee*, “Conduction and low-frequency noise analysis in Al/a-TiOX/Al bipolar switching resistance random access memory devices,” IEEE Electron Device Lett., vol. 31, no. 6, pp. 603-605, June 2010.

[1] B.H. Hong, L. Choi, Y.C. Jung, S.W. Hwang*, K.H. Cho, K.H. Yeo, D.-W. Kim, G.Y. Jin, D. Park, S. -H. Song, Y.Y. Lee, M.H. Son, and D. Ahn, “Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors,” IEEE Trans. Nanotechnology, vol. 9, no. 6, pp. 754-758, Mar. 2010.

Conferences (2010. 3 ~ )

[212] Geon-Hui Kim, Hyo-Won Jang, Ick-Joon Park and Hyuck-In Kwon, "Complementary defect passivation at the buried channel/electrode interface in Cul transistors"

IMID 2026, Busan, Korea, August. 18-21, 2026.

[211] Min-Seong Kim, Chae-Eun Oh and Hyuck-In Kwon, "Temperature Behavior of Apparent Subthreshold Swing Governed by Channel Length in Self-Aligned Top-Gate Coplanar IGZO TFTs"

IMID 2026, Busan, Korea, August. 18-21, 2026.

[210] Dong-Hwi Son, Chae-Eun Oh and Hyuck-In Kwon, "Effect of Channel Length Dependence for PBTS Reliability in self-Aligned Top-Gate coplanar IGZO TFTs"

IMID 2026, Busan, Korea, August. 18-21, 2026.

[209] 김형민, 이준영, 김태인, 박익준, 권혁인, "표면 결정화를 통한 텔루륨 산화물 박막의 전기적 특성 향상 및 CMOS 소자 응용"

2026년 한국전기전자학회 하계학술대회, 제주, 대한민국, 2026년 8월 12일-14일.

[208] 조성민, 오채은, 권혁인, "SA TG Coplanar IGZO TFT의 겉보기 문턱 이하 스윙의 온도 의존성에 대한 채널 길이의 영향"

2026년 한국전기전자학회 하계학술대회, 제주, 대한민국, 2026년 8월 12일-14일.

[207] 채성준, 이현우, 권혁인, "저주파 잡음 분석 기반 SA TG Coplanar IGZO TFT의 PBTS 열화 메커니즘 연구"

2026년 한국전기전자학회 하계학술대회, 제주, 대한민국, 2026년 8월 12일-14일.

[206] Sang-Beom Kim, Joon-Young Lee, Tae-In Kim, Ick-Joon Park, and Hyuck-In Kwon, "Oxidation-Assisted Surface Crystallization of TeO_X TFTs for Low-Power Complementary Logic Circuits"

AWAD 2026, Busan, Korea, July. 12-14, 2026.

[205] Min-Seong Kim, Dong-Hwi Son, Chae-Eun Oh, Hyeon-Woo Lee, and Hyuck-In Kwon, "Physical Origin of the Channel-Length Dependence of PBTI Reliability in Self-Aligned Top-Gate Coplanar IGZO TFTs"

AWAD 2026, Busan, Korea, July. 12-14, 2026.

[204] Hong-Myeong Lee, Chae-Eun Oh, and Hyuck-In Kwon, "Channel-length-dependent temperature behavior of subthreshold swing in self-aligned top-gate InGaZnO TFTs"

AWAD 2026, Busan, Korea, July. 12-14, 2026.

[203] Sung-Joon Chae, Chae-Eun Oh, and Hyuck-In Kwon, "Temperature Behavior of the Subthreshold Swing in Different Channel Length SA-TG Coplanar IGZO TFTs"

ITC-CSCC 2026, Bangkok, Thailand, July. 7-10, 2026.

[202] 김상범, 오종상, 김태인, 박익준, 권혁인, "고성능 2차원 텔루륨 p형 박막 트랜지스터 구현을 위한 Strain-Relaxed Al/Al₂O₃ 적층 구조"

대한전자공학회 2026년도 하계종합학술대회, 서귀포, 대한민국, 2026년 6월 23일-26일.

[201] 정영권, 황진하, 송상헌, 권혁인, "알루미늄 캐핑층 두께에 따른 a-IGTO TFT의 캐리어 산란 메커니즘 분석"

대한전자공학회 2026년도 하계종합학술대회, 서귀포, 대한민국, 2026년 6월 23일-26일.

[200] 정영권, 황성현, 권혁인, "Al₂O₃ 보호층 두께에 따른 a-IGTO 박막의 방사선 안정성 변화"

대한전자공학회 2026년도 하계종합학술대회, 서귀포, 대한민국, 2026년 6월 23일-26일.

[199] Dong-Hwi Son, Chae-Eun Oh, and Hyuck-in Kwon, "Indium-Composition-Dependent Defect-Mediated Instability in Amorphous IGZO TFTs under Self-Heating Stress"

EMRS 2026, Strasbourg, France, May. 25-29, 2026.

[198] Chae-Eun Oh, Dong-Hwi Son, and Hyuck-In Kwon, "Back-Gate Biasing of SA-TG Coplanar IGZO TFTs for AMOLED Driving : Large Subthreshold Swing and Improved Electrical stability"

EMRS 2026, Strasbourg, France, May. 25-29, 2026.

[197] 권혁인, "Self-Aligned Top-Gate Coplanar IGZO 박막 트랜지스터에서 채널 길이에 따른 Apparent Subthreshold Swing의 온도 의존성"

제26회 스마트 미래소재 연구회 학술대회, 부산, 대한민국, 2026년 5월 20일.

[196] Go-Eun Kim, Ick-Joon Park, and Hyuck-In Kwon, "Vacancy Engineered CuI/IGTO Vertical Heterojunctions for High-Performance Self-Powered Ultraviolet Photodetectors"

KCS 2026, 정선, 대한민국, January. 27-30, 2026.

[195] Hyeon-Min Kim, Hyo-Won Jang, Tae-In Kim, Ick-Joon Park, and Hyuck-In Kwon, "Enganced Electrical Performance of Cul Transistors through Hydrogen-Induced Buried Interface Engineering"

KCS 2026, 정선, 대한민국, January. 27-30, 2026.

[194] Go-Eun Kim, Ick-Joon Park, Tae-In Kim, and Hyuck-In Kwon, "Vacancy Engineered CuI-IGTO Vertical Heterojunctions for Self-Powered UV Photodetectors"

ICEIC 2026, Macau, China, January. 18-21, 2026.

[193] Go-Eun Kim, Hyo-Won Jang, Ick-Joon Park, Tae-In Kim, and Hyuck-In Kwon, "Hydrogen Assisted Defect Engineering for High Performance CuI Thin Film Transistors"

ICEIC 2026, Macau, China, January. 18-21, 2026.

[192] Hyeon-Woo Lee, Chae-Eun Oh, and Hyuck-In Kwon, "Channel Length Dependence of Subthreshold Swing's Temperature Behavior in SA TG IGZO TFTs"

ICEIC 2026, Macau, China, January. 18-21, 2026.

[191] Sung-Min Cho, Dong-Hwi Son, Chae-Eun Oh, Jae-man Jang, ByungDu Ahn, JongUk Bae, and Hyuck-In Kwon, "Length Dependency Analysis on PBTS Reliability Differences in SA TG Coplanar IGZO TFTs"

KMID 2026, 강릉, 대한민국, 2026년 01월 19일-21일.

[190] Chae-Eun Oh, Su-Hyeon Lee, Jae-man Jang, ByungDu Ahn, JongUk Bae, and Hyuck-In Kwon, "Modeling of Low Frequency Noise in SA TG Coplanar IGZO TFTs"

KMID 2026, 강릉, 대한민국, 2026년 01월 19일-21일.

[189] 김건희, 장효원, 이제훈, 최병선, 박익준, 권혁인, "CuI 트랜지스터의 묻힌 채널/전극 계면에서의 상호보완적 결함 패시베이션"

대한전자공학회 2025년도 추계종합학술대회, 경기 광주, 대한민국, 2025년 11월 28일-29일.

[188] 김형민, 김고은, 김태인, 박익준, 권혁인, "결함 제어 및 인터페이스 엔지니어링을 통한 CuI/IGTO 기반 자가구동 자외선 포토디텍터의 고성능화"

대한전자공학회 2025년도 추계종합학술대회, 경기 광주, 대한민국, 2025년 11월 28일-29일.

[187] 이현우, 오채은, 권혁인, "채널 길이에 따른 SA TG IGZO TFT의 SS 온도 특성"

대한전자공학회 2025년도 추계종합학술대회, 경기 광주, 대한민국, 2025년 11월 28일-29일.

[186] 정영권, 이준영, 김형민, 이제훈, 최병선, 박익준, 권혁인, "표면 결정화 기반 향상된 텔루륨 산화막 박막 트랜지스터와 저전력 CMOS 논리 회로 응용"

대한전자공학회 2025년도 추계종합학술대회, 경기 광주, 대한민국, 2025년 11월 28일-29일.

[185] 채성준, 이동호, 권혁인, "채널 폭에 따른 SA TG IGZO TFT의 Self-Heating 스트레스에 대한 분석"

대한전자공학회 2025년도 추계종합학술대회, 경기 광주, 대한민국, 2025년 11월 28일-29일.

[184] Y. -G. Jeong, K. Yastu, I. -J. Park, H. -I. Kwon, "Radiation Stability of Al₂O₃-Passivated IGTO Thin Film Transistors under High-Energy X-Ray Irradiation"

ICCE-ASIA 2025, Busan, Korea, October. 27-29, 2025.

[183] H. -W. Lee, C. -E. Oh, H. -I. Kwon, "Impact of Indium Composition on the Self-Heating Reliability of IGZO Thin-Film-Transistors"

ICCE-ASIA 2025, Busan, Korea, October. 27-29, 2025.

[182] C. -H. Kim, C. -E. Oh, D. -H. Son, H. -I. Kwon, "Engineering Vacancy-Tuned Copper Iodide Semiconductors for Next Generation High-Performance p-Type Thin-Film Transistors"

IMID 2025, Busan, Korea, August. 19-22, 2025.

[181] Y. -G. Jeong, H. -W. Lee, H. -I Kwon, "Enhancing Ambipolar Characteristics in Tin Oxide Thin Film Transistors Using Hydrogen Plasma Treatment"

IMID 2025, Busan, Korea, August. 19-22, 2025.

[180] G. -E. Kim, S. -H. Lim, I. -J. Park, T. -I. Kim, H. -I. Kwon, "Strain-Engineered Tellurium Thin-Film Transistors Using Organic–Inorganic Hybrid Passivation"

ITC-CSCC 2025, Seoul, Korea, July. 7-10, 2025.

[179] H. -M. Kim, K. Yatsu, H. -A. Lee, I. -J. Park, and H. -I. Kwon, "Optimization of Al₂O₃ Passivation for Enhanced X-ray Radiation Stability in IGTO Thin-Film Transistors"

ITC-CSCC 2025, Seoul, Korea, July. 7-10, 2025.

[178] 이현우, 오채은, 권혁인, "인듐 조성에 따른 IGZO TFT의 자기 발열 스트레스 하 수소 거동 및 전기적 특성 변화"

대한전자공학회 2025년도 하계종합학술대회, 서귀포, 대한민국, 2025년 6월 25일.

[177] 김형민, 임승현, 김태인, 박익준, 권혁인, "유무기 하이브리드 패시베이션을 통한 텔루륨 박막 트랜지스터의 성능 및 안정성 향상"

대한전자공학회 2025년도 하계종합학술대회, 서귀포, 대한민국, 2025년 6월 25일.

[176] 정영권, 임승현, 박익준, 권혁인, "급속 열처리 온도에 따른 p형 혼합 상 산화주석 박막의 NO₂ 가스 감지 특성 변화"

대한전자공학회 2025년도 하계종합학술대회, 서귀포, 대한민국, 2025년 6월 25일.

[175] 손동휘, 오채은, 김명호, 손경석, 이선희, 권혁인, "AMOLED 응용을 위한 SA TG Coplanar IGZO TFTs의 Back-Gate Biasing 기술 활용"

대한전자공학회 2025년도 하계종합학술대회, 서귀포, 대한민국, 2025년 6월 25일.

[174] H. -W. Jang, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "High-Performance p-Type CuI TFTs with Al₂O₃ Sandwiched Structure"

KCS 2025, Jeongsun, Korea, February. 12-14, 2025.

[173] C. -E. Oh, S. -H. Lee, D. -H. Lee, Y. -H. Ko, C. -Y. Jeong, W. -S. Ryu, J. -Y. Noh, K. -S. Park , and H. -I. Kwon, "Characterization of Low-Frequency Noise in SA TG Coplanar Oxide TFT"

KCS 2025, Jeongsun, Korea, February. 12-14, 2025.

[172] G. -E. Kim, H. -A Lee, T. -I. Kim, I. -J. Park , and H. -I. Kwon, "Advancements in Electrical Performance of P-type CuI Thin-Film Transistors through Vacancy Engineering"

KCS 2025, Jeongsun, Korea, February. 12-14, 2025.

[171] J. -Y. Lee, H. -W. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Crystallization Effects on Tellurium Oxide Thin Films for Low-Power Complementary Logic Circuit"

KCS 2025, Jeongsun, Korea, February. 12-14, 2025.

[170] C. -E. Oh, S. -H. Lee, D. -H. Lee, Y. -H. Ko, C. -Y. Jeong, W. -S. Ryu, J. -Y. Noh, K. -S. Park , and H. -I. Kwon, "Low-Frequency Noise Behaviors in SA TG Coplanar Oxide Thin-Film Transistors"

ICEIC 2025, Osaka, Japan, January. 19-22, 2025.

[169] J. -Y. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Enhancement of Low-Power Complementary Logic Curcuit using Crystallization Effects on Tellurium Oxide Thin Films"

ICEIC 2025, Osaka, Japan, January. 19-22, 2025.

[168] H. -W. Jang, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Enhancing P-Type Transistor Performance through Al2O3-Sandwiched CuI Thin Films"

ICEIC 2025, Osaka, Japan, January. 19-22, 2025.

[167] C. -H. Kim, J. -S. Oh, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Advancements in Electrical Performance of P-type Tellurium Thin-Film Transistors through Strain Modulation"

ICEIC 2025, Osaka, Japan, January. 19-22, 2025.

[166] G. -E. Kim, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Vacancy Engineering of CuI Semiconductor for p-Type Thin-Film Transistors"

ICEIC 2025, Osaka, Japan, January. 19-22, 2025.

[165] J. -Y. Lee, J. -S. Oh, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Improvement of Electrical Performances of p-Type Tellurium Thin-Film Transistor Using Strain Modulation Technique"

IMID 2024, Jeju, Korea, Aug. 20-23, 2024.

[164] H. -W. Jang, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "High-Performance CuI p-Type Thin-Film Transistors with ALD Al2O3-Based Sandwiched Structure"

IMID 2024, Jeju, Korea, Aug. 20-23, 2024.

[163] J. -Y. Lee, J. -S. Oh, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "High Performance P-type Te Thin-Film Transistors using Strain Modulation Effects"

AWAD 2024, Gangneung, Korea, July. 7-10, 2024.

[162] H. -W. Jang, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Enhancing P-Type Transistor Performance through Al2O3-Sandwiched CuI Thin Films"

AWAD 2024, Gangneung, Korea, July. 7-10, 2024.

[161] D. -H. Lee, J. -H. Hwang, M. -H. Kim, K. -S. Son, J. -H. Lim, S. -H. Song, and H. -I. Kwon, "Effects of Channel Width on Electrical Performance Degradation in IGZO TFTs under Self-Heating Stresses"

KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[160] C. -E Oh, D. -H. Lee, T. -I. Kim, M. -H. Kim, K. -S. Son, J. -H. Lim, S. -H. Song, and H. -I. Kwon, "Influence of Oxygen Content on Output Characteristics of IGZO TFTs during High Current Operation"

KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[159] H. -A. Lee, H. -W. Jang, K. Yatsu, I. -J. Park, and H. -I. Kwon, "Effects of Al2O3 Surface Passivation on the Radiation Stability of IGTO Thin Film Transistors under High-Energy X-ray Irradiation"

KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[158] H. -A. Lee, H. -W. Jang, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Vacancy Engineering for High-Performance p-Type CuI Thin-Film Transistors"

KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[157] J. -S. Oh, J. -Y. Lee, S. -H. Lim, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "High-Performance p-Type Tellurium Thin Film Transistors with Organic-Inorganic Hybrid Passivation Layer"

KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[156] H. -A. Lee, K. Yatsu, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Vacancy Engineering for High-Performance p-Type CuI Thin-Film Transistors"

ICSE 2023, Busan, Korea, Nov. 19-24, 2023. (invited)

[155] J. -S. Oh, S. -H. Lim, J. -Y. Lee, I. -J. Park, and H. -I. Kwon, "Implementation of Ambipolar Tin Oxide Thin-Film Transistors using Hydrogen Plasma Treatment"

AWAD 2023, Yokohama, Japan, Jul. 10-11, 2023.

[154] H. -A. Lee, H. -W. Jang, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Vacancy Engineering of CuI Semiconductor for p-Type Thin-Film Transistors"

AWAD 2023, Yokohama, Japan, Jul. 10-11, 2023.

[153] H. -A. Lee, S. -H. Hwang, H. -W. Jang, I. -J. Park, and H. -I. Kwon, "Surface Passivation Effects on the Radiation Tolerance of IGTO Thin-Film Transistors under Proton Irradiation"

AWAD 2023, Yokohama, Japan, Jul. 10-11, 2023.

[152] H. -W. Jang, H. -A. Lee, T. -I. Kim, I. -J. Park, and H. -I. Kwon, "Vacancy Engineered Copper Iodide Semiconductor for p-Type Thin-Film Transistors"

IEEE-NANO 2023, Jeju, Korea, Jul. 2-5, 2023.

[151] H. -A. Lee, H. -W. Jang, M. -G. Shin, and H. -I. Kwon, "Channel Layer Thickness Effects on Radiation Stability of Amorphous Oxide TFT"

ITC-CSCC 2023, Jeju, Korea, Jun. 25-28, 2023.

[150] Y. -G. Kim, C. -E. Oh, M. -H. Kim, K. -S. Son, J. -H. Lim, S. -H. Song, and H. -I. Kwon, "Influence of Oxygen Content on Output Characteristics of IGZO TFTs under High Current Stress Conditions"

ITC-CSCC 2023, Jeju, Korea, Jun. 25-28, 2023.

[149] J. -S. Oh, S. -H. Lim, J. -Y. Lee, and H. -I. Kwon, "Effects of Oxygen Partial Pressure on Electrical Properties and Stabilities of High-Mobility IGTO Thin-Film Transistor"

ITC-CSCC 2023, Jeju, Korea, Jun. 25-28, 2023.

[148] S. -H. Hwang, K. Yatsu, M. -G. Shin, and H. -I. Kwon, "A Study on the Radiation Tolerance of Amorphous IGTO Thin-Film Transistors"

2023년 한국세라믹학회 춘계학술대회, 라마다프라자 제주호텔, 대한민국, 2023년 4월 12일 - 14일 (invited).

[147] D. -H Lee, C. -E Oh, S. -H Lee, Y. -G Kim, Y. -L Han, and H. -I Kwon, "Determination of Interface and Bulk Trap Densities in TG-SA Coplanar IGZO TFTs Using Low-Frequency C-V and SCLC Techniques"

KCS 2023, Jeongseon, Korea, Feb. 13-15, 2023.

[146] S. -H Lim, J. -S Oh, I. -J Park, and H. -I Kwon, "Effects of Rapid Thermal Annealing Temperature on p-type NO2 Gas Sensing Properties of RF Sputtered Tin Oxide Thin Films"

KCS 2023, Jeongseon, Korea, Feb. 13-15, 2023.

[145] S. -H Lim, K. -H Bae, J. -S Oh, I. -J Park, and H. -I Kwon, "Implementation of Ambipolar Tin Oxide Thin-Film Transistors Using Hydrogen Plasma Treatment"

KCS 2023, Jeongseon, Korea, Feb. 13-15, 2023.

[144] H. -A Lee, K. Yatsu, C. -E Oh, D. -H Kim, I. -J Park, and H. -I Kwon, "Radiation Robust Oxide-TFT-Based Complementary Logic Circuits"

KCS 2023, Jeongseon, Korea, Feb. 13-15, 2023.

[143] S. -H Lee, H. -S Jeong, H. -S Cha, S. -H Hwang, and H. -I Kwon, "Annealing Ambient Effects on IGTO Thin Films for Thin Film Transistor Applications"

ICEIC 2023, Singapore, Feb. 5-8, 2023.

[142] C. -E Oh, D. -H Kim, H. -S Cha, H. -S Jeong, S. -H Hwang, and H. -I Kwon, "Channel Thickness Effects in IGTO Thin-Film Transistors"

ICEIC 2023, Singapore, Feb. 5-8, 2023.

[141] 오채은, 이수현, 권혁인, "Separate Extraction of Bulk & Interface Traps of Self-Aligned Top-Gate Coplanar Oxide TFT"

2022년 한국전기전자학회 하계학술대회, 제주대학교, 대한민국, 2022년 8월 11 - 13일 (학술대회 우수논문상).

[140] M. -G Shin, S. -H Hwang, K. Yatsu, C. -E Oh, S. -H Lee, and H. -I Kwon, "Radiation Effects and Radiation Tolerance Solutions for Amorphous Oxide Thin-Film Transistors"

ICEIC 2022, Online, Korea, Feb. 6-9, 2022.

[139] 황성현, 야쯔기에, 이동호, 배강환, 박익준, 권혁인, "Al2O3 보호막 층의 증착두께와 방법이 IGTO TFT의 내방사선성에 미치는 영향에 관한 연구"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022.

[138] K. -H Bae, S. -H Lim, C. -S Jeong, G. -H Lee, S. -W Youn, F. -S Kim, and H. -I Kwon, "Lithium ion based IGZO synaptic transistor for highly linear weight update"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022 (outstanding poster paper award).

[137] M. -G Shin, S. -H Hwang, K. Yatsu, D. -H Lee, and H. -I Kwon, "Effects of Proton Beam Irradiation on the Active Layer Thickness of IGTO Thin Film Transistor"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022.

[136] D. -H Kim, H. -S Cha, H. -S Jeong, K. Yatsu, C. -E Oh, and H. -I Kwon, "Influence of Channel Layer Thickness on the Electrical Characteristics and Stability of In-Ga-Sn-O TFTs"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022.

[135] H. -S Jeong, H. -S Cha, D. -H Lee, and H. -I Kwon, "Electrical Properties and Stability of High-Mobility IGTO TFTs Depending on Annealing Atmosphere"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022.

[134] H. -J Joo, K. Yatsu, D. -H Kim, H. -S Cha, S. -H Lee, and S. -H Song, "Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in IGZO Thin Films"

KCS 2022, Jeongseon, Korea, Jan. 24-26, 2022.

[133] M. -G Shin, S. -H Hwang, K. Yatsu, and H. -I Kwon, "A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors"

The 28th International Display Workshop (IDW '21), Virtual Conference, Japan, Dec. 1-3, 2021. (invited)

[132] K. -H Bae, C. -S Jeong, S. -H Hwang, F. -S Kim, H. -J Kim, and H. -I Kwon, "A Highly Linear IGZO Synaptic Transistor with a Lithium Ion Based Electrolyte"

ICAE 2021, Jeju, Korea, Nov. 9-12, 2021.

[131] K. -H Bae, M. -G Shin, S. -H Hwang, H. -S Jeong, D. -H Kim and H. -I Kwon, "Electrical Performance and Stability Improvement of p-type SnO Thin-Film Transistors Using Al2O3 Capping Layer"

ICAE 2021, Jeju, Korea, Nov. 9-12, 2021.

[130] 황성현, 신민규, 이동호, 차현석, 정환석, 김대환, 권혁인, "IGTO 박막 트랜지스터의 채널층 두께가 양성자 빔 내방사선성에 미치는 영향"

2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일.

[129] 이동호, 차현석, 정환석, 황성현, 권혁인, "Aluminium Capping layer의 두께에 따른 IGTO TFT의 전기적 성능 및 신뢰성 향상"

2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일.

[128] 배강환, 신민규, 황성현, 정환석, 김대환, 권혁인, "Al2O3 캡핑 층을 이용한 SnO 박막 트랜지스터의 전기적 성능 및 신뢰성 개선"

2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일 (학술대회 우수논문상).

[127] H. -S Cha, H. -S Jeong, S. -H Hwang, D. -H Lee and H. -I Kwon, "Influence of Al capping Lyer Thickness on Stability and Electrical Performance of IGTO TFTs"

AWAD 2021, Virtual, Aug. 26-27, 2021.

[126] S. -H Hwang, H. -S Cha, H. -S Jeong, D. -H Lee and H. -I Kwon, "Effects of Al cappling Layer Thickness on Electrical Performance and Stability of IGTO TFTs"

IMID 2021, Online, Aug. 25-26, 2021.

[125] S. -H Hwang, M. -G Shin, D. -H Lee, H. -S Cha, H. -S Jeong, D. -H Kim and H. -I Kwon, "Effects of proton beam irradiation according to the channel layer thickness of IGTO thin film transistor"

IEIE 2021, Jeju, Korea, Jun. 30-Jul. 2, 2021.

[124] D. -H Lee, H. -S Cha, H. -S Jeong, S. -H Hwang, and H. -I Kwon, "Improvement of Electrical Performance and Stability of IGTO TFTs according to the thickness of Aluminum Capping Layer"

IEIE 2021, Jeju, Korea, Jun. 30-Jul. 2, 2021.

[123] H. -S Cha, H. -S Jeong, S. -H Hwang, D. -H Lee, and H. -I Kwon, "Effects of Al Capping Layer Thickness on Electrical Performance and Stability of IGTO TFTs"

ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[122] H. -S Jeong, D. -H Lee, H. -S Cha, S. -H Hwang and H. -I Kwon, "Effect of Post-Deposition Annealing Environments on Electrical Properties and Stability of High-Mobility IGTO TFTs"

ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[121] K. -H Bae, M. -G Shin, H. -S Cha, H. -S Jeong, D.-H Kim and H.-I. Kwon, "Electrical performance and stability improvement of SnO thin-film transistors using capping layer"

ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[120] H. -S Cha, S. -H Hwang, H. -S Jeong and Hyuck-In Kwon, "Effects of Al Capping Layer Thickness on Electrical Performance and Stability of IGTO TFTs"

KCS 2021, Online, Jan. 25-29, 2021.

[119] H. -S. Jeong, H. -S Cha, S. -H Hwang, and H. -I. Kwon, "Effects of Post-Deposition Annealing Ambient on Electrical Characteristics and Stability of High-Mobility IGTO TFTs"

KCS 2021, Online, Jan. 25-29, 2021.

[118] M. -G. Shin, K. -H. Bae, H. -S. Cha, H. -S. Jeong, D. -H. Kim and H.-I. Kwon, "Effects of Incorporating Ni Capping Layer in p-channel Tin Monoxide Thin-Film Transistors"

The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, Nov. 1-4, 2020.

[117] H. -I. Kwon, "Low-Temperature-Operated Sensitive NO2 Gas Sensors Based on P-type SnOx Thin-Film Transistors"

The 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'20), Kyoto, Japan, Sep. 1-4, 2020. (invited)

[116] D. -H. Kim, S. -Y. Hong, H. -J. Kim, H. -Y. Jeong, S. -H. Song, I. -T. Cho, J. -N. Noh, H. -S Shin, K. -S. Park, H. -C. Choi, I. -B. Kang, and H. -I. Kwon, "Effects of Lateral Carrier Diffusion and Source-Drain Parasitic Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Flim Transistors"

KCS2020, Jeongseon, Korea, Feb. 12-14, 2020.

[115] H. -J. Joo, M. -G. Shin, H. -S. Cha, and H. -I Kwon, "Vertically Stacked Complementary Inverter Using p-type SnO and n-type IGZO Thin-Flim Transistors for Logic and Photo-sensor Operation"

KCS2020, Jeongseon, Korea, Feb. 12-14, 2020 (outstanding poster paper award).

[114] M. -G. Shin, H. -Y. Jeong, H. -J Joo, H. -S. Jeong, D. -H. Kim, H. -S. Cha, and H. -I Kwon, "Effects of Proton Irradiation on p-type Polycrystalline Thin-Flim Transistors"

KCS2020, Jeongseon, Korea, Feb. 12-14, 2020.

[113] H. -Y. Jeong, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, J. -W. Lee, H. -S. Cha and H. -I. Kwon, "Influence of MeV Proton Irradiation on p-type SnO Thin-Film Transistors"

ICAE2019, Jeju, Korea, Nov. 5-8, 2019 (outstanding poster paper award).

[112] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon, "High performance NO2 gas sensor based on p-type SnOx thin film transistor"

IMID2019, Kyeongju, Korea, Aug. 27-30, 2019.

[111] H. -S. Jeong, M. -J. Park, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Effect of a pre-bias on the adsorption of NO2 gas in a-IGZO TFTs gas sensor"

IMID2019, Kyeongju, Korea, Aug. 27-30, 2019.

[110] H. -Y. Jeong, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Effects of Proton Irradiation on p-type SnO Thin-Film Transistors"

IMID2019, Kyeongju, Korea, Aug. 27-30, 2019.

[109] H. -J. Joo, M. -G. Shin, and H. -I. Kwon, "High-Gain Complementary Inverter with High Output Resistance Corbino Thin-Film Transistors Using P-Type SnO and N-Type IGZO Active Layers"

IMID2019, Kyeongju, Korea, Aug. 27-30, 2019.

[108] H. -Y. Jeong, X. Jin, and H. -I. Kwon, "Electrical stability of p-channel tin monoxide thin-film transistors under harsh environments"

ADMD2019, Guangzhou, China, July. 23-25, 2019.

[107] H. -J. Joo, X. Jin, and H. -I. Kwon, "Investigation of electrical performance of Corbino structure p-channel tin monoxide thin-film transistors"

ADMD2019, Guangzhou, China, July. 23-25, 2019.

[106] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon, "Room-temperature-operated Sensitive NO2 Gas Sensors Based on P-type SnOx Thin-Film and Thin-Film Transistor"

AWAD2019, Busan, Korea, Jun. 19-21, 2019.

[105] M. -J. Park, H. -S. Jeong, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Effects of Pre-Bias Application on NO2 Gas Sensors"