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  Journals (2010. 3 ~ )

 

[127] H. -S. Jeong et al., "Origin of~" Under Preparation (2021).

[126] G. -H. Bae et al., "Enhanced Ambipolar~" Under Review (2021).

[125] S. -J. Choi, J. -G. Park, S. -H. Hwang, C. -W. Kim, Y. -S. Kim, S. Oh, J. -H. Baeck, J. -U. Bae, J. -Y. Noh, S. -W. Lee, K. -S. Park, J. -J. Kim, S. -Y. Yoon, H. -I. Kwon* and D. -H. Kim*, "Excessive Oxygen Peroxide Model-Based Universal Analysis of Positive-Bias-Stress and Negative-Bias-Illumination-Stress Instabilities in Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors", accepted for publication in Adv. Electron. Mater. 

[124] S. -H. Hwang, K. Yatsu, D. -H. Lee, I. -J. Park* and H. -I. Kwon*, "Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications", Appl. Surf. Sci, vol.578, pp.152096, Mar. 2022.

[123] H. -S. Cha, S. -H. Hwang, D. -H. Kim H. -I. Kwon and S. -H. Song*, "Wheatstone Bridge Based Offset Cancelling Method utilizing a JFET as a Voltage-Controlled Resistor", Measurement, vol. 186, pp.110128-1-110128-6, Dec. 2021.

[122] D. -H. Kim, H. -S. Jeong, D. -H. Lee, K. -H. Bae, S. -H. Lee, M. -H Kim, J. -H Lim, and H. -I. Kwon*, "Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors", Coatings, vol. 11, 1192-1-1192- 11, Sep. 2021.

[121] D. -H. Lee, D. -H. Kim, H. -S. Jeong,  S. -H. Hwang, S. -H. Lee, M. -H. Kim, J. -H. Lim and  H. -I. Kwon* "Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance-Voltage and Current-Voltage Characteristics", Coatings, vol.11, pp.1135-1-1135-9, Sep. 2021.

[120] H. -S. Jeong, H. -S. Cha, S. -H. Hwang, D. -H. Lee,S. -H. Song* and H. -I. Kwon*, "Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition", Coatings, vol .11, pp. 698-1-698-10, Jun. 2021.

[119] D. -H. Kim, H. -S. Cha, H. -S. Jeong, S. -H. Hwang and H. -I. Kwon*, "Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistors", Electronics, vol .10, pp. 1295-1-1295-10, May. 2021.

[118] M. -G. Shin, S. -H. Hwang, H. -S. Cha, H. -S. Jeong, D. -H. Kim and H. -I. Kwon*, "Effects of proton beam irradiation on the physical and chemical properties of IGTO thin films with different thicknesses for thin-film transistor applications" Sufaces and Interfaces, vol. 23, pp.100990, Apr. 2021.

[117] H. -S. Cha, H. -S. Jeong, S. -H. Hwang, D. -H. Lee and H. -I. Kwon *, "Electrical Performance and Stability Improvements of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors using an Oxidized Aluminum Capping Layer of Optimal Thickness," Electronics, vol. 9, pp. 2196-1-2196-10, Dec. 2020.

[116] K. -H. Bae, M. -G. Shin, S. -H. Hwang, H. -S. Jeong, D. -H. Kim and H. -I. Kwon *, "Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al2O3 Capping Layer," IEEE Access, vol. 8, pp. 222410-222416, Dec. 2020.

[115] H. -S. Jeong, H. S. Cha, S. H. Hwang and H. -I. Kwon *, "Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors," Electronics, vol. 9, pp. 1875-1-1875-10, Nov. 2020.

[114] M. -G. Shin, K. -H. Bae, H. -S. Jeong, D. -H. Kim, H. -S. Cha and H. -I. Kwon *, "Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors," Micromachines, vol. 11, pp. 917-1-917-12, Sep. 2020.

[113] H. -J. Joo, D. -H. Kim, H. -S. Cha, and S. -H. Song*, "Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films," Micromachines, vol. 11, pp. 822-1-822-10, Aug. 2020.

[112] D. Ho, H. -Y. Jeong, M. N. Le, H. Usta, H. -I. Kwon, M. -G. Kim * and C. Kim *, "Microstructural Modulation of Organic Passivation Layers for Metal Oxide Semiconductors to Achieve High Bias Stability," J. Mater. Chem. C, vol. 8, pp. 11209-11222, Jul. 2020.

[111] M. -G. Shin, K. -H. Bae, H. -S. Cha, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon *, "Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors," Materials, vol. 13, pp. 3055-1-3055-9, Jul. 2020.

[110] B. H. Lee, S. -Y. Hong, D. -H. Kim, S. Kim, H. -I. Kwon, and S. Y. Lee *, "Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors," PHYSICA B, vol. 574, pp. 311629-1-311629-6, Dec. 2019.

[109] H. -J. Joo, M. -G. Shin, H. -Y. Jeong, H. -S. Cha, D. Nam, and H. -I. Kwon *, "Oxide thin-flim transistor-based vertically stacked complementary inverter for logic and photo-sensor operations," Materials, vol. 12, pp. 3815-1-3815-11, Nov. 2019.

[108] Y. Seo, H. -S. Jeong, H. -Y. Jeong, S. Park, J. T. Jang, S. Choi, D. M. Kim, S. -J. Choi, X. Jin, H. -I. Kwon *, D. H. Kim *, "Effect of simultaneous mechanical and electrical stress on the electrical performance of flexible In-Ga-Zn-O thin-film transistors," Materials, vol. 12, pp. 3248-1-3248-8, Oct. 2019.

[107] H. -J. Joo, M. -G. Shin, S. -H. Kwon, H. -Y. Jeong, H. -S. Jeong, D. -H. Kim, X. Jin, S. -H. Song, and H. -I. Kwon *, "High-Gain Complementary Inverter Based on Corbino p-type Tin Monoxide and n-type Indium-Gallium-Zinc Oxide Thin-Film Transistors," IEEE Electron Device Lett., vol. 40, no. 10, pp. 1642-1645, Oct. 2019.

[106] H. -Y. Jeong, S. -H. Kwon, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon *, "Radiation-Tolerant P-type SnO Thin-Film Transistors," IEEE Electron Device Lett., vol. 40, no. 7, pp. 1124-1127, Jul. 2019.

[105] M. -J. Park, H. -S. Jeong, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon *, "Improvement of NO2 gas-sensing properties in InGaZnO thin-film transistors by a pre-biasing measurement method," Semicond. Sci. Technol., vol. 34, no. 6, pp. 065010-1-065010-10, Jun. 2019.

[104] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon *, "Highly sensitive and selective room-temperature NO2 gas sensing characteristics of SnOx-based p-type thin-film transistor," Sensors and Actuators B, vol. 288, pp. 625-633, Jun. 2019.

[103] S. -Y. Hong, H. -J. Kim, D. -H. Kim, H. -Y. Jeong, S. -H. Song, I. -T. Cho, J. Y. Noh, P. S. Yun, S. -W. Lee, K. -S. Park, S. Y. Yoon, I. B. Kang, and H. -I. Kwon *, "Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors," Sci. Rep., vol. 9, pp. 6588-1-6588-11, Apr. 2019.

[102] K. H. Kim, S. -D. Bae, H. -I. Kwon, S. J. Kwon, and E. -S. Cho*, "Xenon Flash Lamp Annealing on a-IGZO Thin-film Transistors at Different Pulse Repetition Numbers," J. Semicond. Tech. Sci., vol. 19, no. 2, pp. 178-183, Apr. 2019.

[101] Y. Zhang, S. Hosono, N. Nagai, S. -H. Song, and K. Hirakawa *, "Fast and sensitive bolometric terahertz detection at room temperature through thermomechanical transduction," Journal of Applied Physics, vol 125, issue 15, pp. 151602-1-151602-6, Mar. 2019.

[100] S. -H. Kwon, H. -J. Joo and H. -I. Kwon *, "Effects of simultaneous ultraviolet and thermal treatments on physical and chemical properties of RF-sputtered p-type SnO thin-films," Ceram Int, vol. 44, issue. 17, pp. 20883-20889, Dec. 2018.

[99] I. H. Kwon, H. -I. Kwon, and I. H. Cho*, "Development of high temperature operation silicon based MOSFET for harsh environment application," Results in Physics, vol. 11, pp. 475-481, Dec. 2018.

[98] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, S. -H. Song*, and H. -I. Kwon *, "Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior," Ceram Int, vol. 44, issue. 14, pp. 17283-17289, Oct. 2018.

[97] R. K. Mishra, J. -H. Ryu, H. -I. Kwon*, and S. J. Jin*, "A new strategy for integrating semiconducting SWCNTs into pseudo-cubic In2O3 heterostructures for solid-state symmetric supercapacitors with a superior stability and specific capacitance," J. Mater. Chem. A, vol. 6, issue. 31, pp. 15253-15264, Aug. 2018.

[96] J. H. Ryu, G. -W. Baek, S. Y. Kim, H. -I. Kwon*, and S. H. Jin*, "Spray-Coated  Single Walled Carbon Nanotubes as Source and Drain Electrodes in SnO Thin-Film Transistors." Semicond. Sci. Technol., vol. 33, no. 7, pp. 075013-1-075013-7, Jul. 2018.

[95] R. K. Mishra, J. -H. Ryu, H. -I. Kwon*, and S. J. Jin*, "Novel two-dimensional In2O3 nanodiscs for high-rate performance of solid-state symmetric supercapacitors," Materials Letters, vol. 218, no. 1, pp. 131-134, May 2018.

[94] S. M. Kwon, J. Won, J. -W. Jo, J. Kim, H. -J. Kim, H. -I. Kwon, J. Kim, S. Ahn, Y. -H. Kim, M. -J. Lee, H. -I. Lee, T. J. Marks*, M. -G. Kim*, and S. K. Park*, "High-Performance and Scalable Metal-Chalcogenide Semiconductors and Devices via Chalco-Gel Routes," Science Advances, vol. 4, no. 4, eaap9104, Apr. 2018.

[93] M. Wu, J. Shin, Y. Hong, D. Jang, X. Jin, H. -I. Kwon, and J. -H. Lee*, "An FET-Type Gas Sensor with a sodium ion conducting solid electrolyte for CO2 detection," Sensors and Actuators B,  vol. 259, no. 15, pp.1058-1065,  Apr. 2018.

[92] J. Shin, Y. Hong, M. Wu, H. -I. Kwon*, B. -G. Park, and J. -H. Lee*, "An Accurate and stable humidity sensing characteristic of Si FET-type humudity sensor with MoS2 as a sensing layer by pulse measurement," Sensors and Actuators B,  vol. 258, no. 1, pp. 574-579,  Apr. 2018.

[91] R. K. Mishra, S. Manivannan, K. Kim, H. -I. Kwon*, and S. H. Jin*, "Petal-like MoS2 Nanostructures with Metallic 1T Phase for High Performance Supercapacitors," Curr. Appl. Phys., vol. 18, pp. 345-352, Mar. 2018.

[90] R. K. Mishra, G. W. Baek, K. Kim, H. -I. Kwon*, and S. H. Jin*, "One-step solvothermal synthesis of carnation flower-like SnS2 as superior electrodes for supercapacitor application," Appl. Surf. Sci., vol. 425, pp. 923-931, Dec. 2017.

[89] W. Y. Choi*, H. -I. Kwon, and K. Kim, "Lateral Nanoelectromechanical Relays for Reconfigurable Logic," J. Nanoelectron. Optoelectron., vol. 12, pp. 1402-1405, Dec. 2017.

[88] D. -H. Kim, M. -J. Park, and H. -I. Kwon*, "Separate Extraction of Densities of interface and Bulk Trap States in High-Mobility ZnON Thin-Film Transistors," J. Nanoelectron. Optoelectron., vol. 12, pp. 1263-1266, Nov. 2017.

[87] C. -H. Lee, C. -H. Hong, Y. -B. Na, J. -J. Park, ,H. -I. Kwon*, and W. -S. Cheong*,  "Design of Cell-Patterns for Large-Sized Window Unified Touch Screen Panels with High Sensitivity," J. Nanosci. Nanotechnol., vol. 17, no. 11, pp. 7865-7868, Nov. 2017.

[86] H. -I. Kwon*, "Investigation of Carrier Transport Mechanism in p-Type Tungsten Diselenide Field-Effect Transistors,"  J. Nanoelectron. Optoelectron., vol. 12, pp. 1137-1140, Oct. 2017.

[85] H. -I. Kwon*, "High-Performance Hybrid Complementary Inverter with N-type InGaZnO and P-type WSe2 Thin-Film Transistors," J. Nanoelectron. Optoelectron., vol. 12, pp. 1119-1122, Oct. 2017.

[84] I. Hwang, J. H. Kim, M. Lee, M. -W. Lee, H. -J. Kim, H. -I. Kwon, D. K. Hwang, M. G. Kim, H. Yoon, Y. -H. Kim*, and S. -K. Park*, "Wide-spectral/dynamic-range skin-compatible phototransistors enable by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors," Nanoscale, vol. 9, pp. 16711-16721, Sep. 2017.

[83] D. -H. Kim, M. J. Park, and H. -I. Kwon*, "Effect of channel layer thickness on electrical and thermal stabilities of high-mobility zinc oxynitride thin-film transistors," ECS J. Solid State Sci. Technol., vol. 6, no. 11, pp. Q109-Q113, Sep. 2017.

[82] J. -H. Ji, U. -C. Moon, H. -I. Kwon*, and J. -H. Koh*, "The two-step sintering effect on the dielectric and piezoelectric properties of (Na,K)NbO3-BiScO3 lead-free ceramics" Ceram. Int., vol. 43, no. 1, pp.S97-S101, Aug. 2017.

[81] Md. M. I. Khan, G. W. Baek, K. Kim, H. -I. Kwon*, and S. H. Jin*, "Simultaneous detection of dopamine and uric acid on indium tin oxides modified with cost-effective gas-phase synthesized single walled carbon nanotubes," Electroanalysis, vol. 29, no. 8, pp. 1925-1933, Aug. 2017.

[80] C. -Y. Jeong, H. -J. Kim, S. -Y. Hong, S. -H. Song, and H. -I. Kwon*, "Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous In-Ga-Zn-O thin-film transistors," Jpn. J. Appl. Phys., vol. 56, pp. 080301-1-080301-4, Aug. 2017.

[79] S. -D. Bae, S. -H. Kwon, H. -S. Jeong, and H. -I. Kwon*, "Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments," Semicond. Sci. Technol., Vol. 32, no. 7, pp. 075006-1-075006-7, Jul. 2017.

[78] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon*, "Enhanced Electrical Performance and Stability in Zinc Oxynitride Thin-Film Transistors via Sequential Ultraviolet and Thermal Treatment," IEEE Electron Device Lett., vol. 38, no. 7, pp. 883-886, Jul. 2017.

[77] H. -J. Kim, S. -Y. Hong, D. -H. Kim, H. -S. Jeong, and H. -I. Kwon*, "Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors," J. Vac. Sci. Technol. B., vol. 35, no. 3, pp. 030602-1-030602-6, May/Jun. 2017.

[76] J. -W. Yang, Y. -B. Na, J. -H. Shin, C. -H. Hong, W. -H. Seo, K. -H. Kim, C. -W. Song, S. -H. Song, H. -I. Kwon, and W. -S. Cheong*, "Effects of Er-Doping on Amorphous InZnSnO/InZnSnO:Er Double-Channel Thin-Film Transistors," J. Nanosci. Nanotechnol. vol. 17, no. 5, pp. 3415-3419, May 2017.

[75] W. -H. Seo, C. -H. Hong, J. -W. Yang, Y. -B. Na, H. -I. Kwon*, and W. -S. Cheong*, "Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator," J. Nanosci. Nanotechnol. vol. 17, no. 5, pp. 3089-3091, May 2017.

[74] C. -Y. Jeong, H. -J. Kim, J. -H. Lee, and H. -I. Kwon*, "Experimental Investigation of Physical Mechanism for Asymmetrical Degradation in Amorphous InGaZnO Thin-Film Transistors under Simultaneous Gate and Drain Bias Stresses," J. Semicond. Tech. Sci., vol. 17, no. 2, pp. 239-244, Apr. 2017.

[73] H. -J. Kim, D. -H. Kim, C. -Y. Jeong, J. -H. Lee, and H. -I. Kwon*, "Determination of Interface and Bulk Trap Densities in High-Mobility P-type WSe2 Thin-Film Transistors," IEEE Electron Device Lett., vol. 38, no. 4, pp. 481-484, Apr. 2017.

[72] H. -J. Kim, C. -Y. Jeong, S. -D. Bae, J. -H. Lee, and H. -I. Kwon*, "Charge Transport Mechanism in P-Channel Tin Monoxide Thin-Film Transistors," IEEE Electron Device Lett., vol. 38, no. 4, pp. 473-476, Apr. 2017.

[71] J. I. Kim, C. -Y. Jeong, H. -I. Kwon, K. D. Jung, M. S. Park, K. -H. Kim, M. S. Seo, and J. -H. Lee*, "Modeling of asymmetric degradation based on non-uniform electric field and temperature in amorphous In-Ga-Zn-O thin film transistors," Semicond. Sci. Technol., vol. 32, no. 3, pp. 035017-1-035017-7, Mar. 2017.

[70] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon*, "Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure," Nanotechnology, vol. 28, no. 9, pp. 095207-1-095207-6, Mar. 2017.

[69] D. -H. Kim, H. -S. Jeong, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon*, "Effects of oxygen flow rate on the electrical stability of zinc oxynitride thin-film transistor," Jpn. J. Appl. Phys., vol. 56, pp. 020301-01-020301-04, Feb. 2017.

[68] H. -J. Kim, C. -Y. Jeong, S. -D. Bae, and H. -I. Kwon*, "Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors," J. Vac. Sci. Technol. B., vol. 35, no. 1, pp. 010601-1-010601-6, Jan./Feb. 2017.

[67] C. -Y. Jeong, H. -J. Kim, D. -H. Kim, H. -S. Kim, T. S. Kim, J. -B. Seon, S. Lee, D. H. Kim*, and H. -I. Kwon*, "Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 1570-1573, Dec. 2016.

[66] C. -Y. Jeong, H. -J. Kim, J. I. Kim, J. -H. Lee, and H. -I. Kwon*, "Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors," J. Vac. Sci. Technol. B. vol. 34, pp. 060601-1-060601-4, Nov./Dec. 2016.

[65] M. -K. Eo and H. -I. Kwon*, "Effects of Undoped GaN Capping Layer on p-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors," J. Nanosci. Nanotechnol. vol. 16, pp. 11386-11390, Nov. 2016.

[64] C. -Y. Jeong, J. -H. Lee, Y. -J. Choi, C. -W. Lee, S. -H. Song, and H. -I. Kwon*, "Low-Frequency Noise Properties in P-Type SnO Thin-Film Transistors," J. Nanosci. Nanotechnol. vol. 16, pp. 11381-11385, Nov. 2016.

[63] Y. -J. Yoon, J. H. Seo, H. -I. Kwon*, J. -H. Lee, and I. -M. Kang*, "Enhancement-Mode GaN-Based Junctionless Vertical Surrounding-Gate Transistor with Dual-Material Gate Structure for High-Frequency Applications," J. Nanosci. Nanotechnol. vol. 16, pp. 10204-10209, Oct. 2016.

[62] J. H. Seo, Y. J. Yoon, Y. -W. Jo, D. -H. Son, S. Cho, H. -I. Kwon*, J. -H. Lee, and I. M. Kang*, "Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)," J. Nanosci. Nanotechnol. vol. 16, pp. 10199-10203, Oct. 2016.

[61] J. -H. Lee, Y. -J. Choi, C. -Y. Jeong, C. -W. Lee, and H. -I. Kwon*, "Temperature-Dependent Electrical Instability of p-type SnO Thin-Film Transistors," J. Vac. Sci. Technol. B. vol. 34, pp. 041210-1-041210-6, Jul./Aug. 2016.

[60] H. R. Eun, Y. J. Yoon, J. H. Seo, M. S. Cho, J. -H. Lee, H. -I. Kwon*, and I. M. Kang*, "Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer," Current Appl. Phys., vol. 16, pp. 681-685, Jul. 2016.

[59] H. Jeong, H. -S. Jeong, D. -H. Kim, C. -Y. Jeong, and H. -I. Kwon*, "Effects of Post-Deposition Thermal Annealing Temperature on Electrical Properties of ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 747-750, Jun. 2016.

[58] C. -Y. Jeong, H. -J. Kim, D. -H. Kim, H. -S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J. -B. Seon, K. S. Son, S. Lee, S. -H. Cho, Y. S. Park, D. H. Kim*, and H. -I. Kwon*, "Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors," IEEE Electron Device Lett., vol. 37, pp. 739-742, Jun. 2016.

[57] Y. J. Yoon, J. H. Seo, S. Cho, H. -I. Kwon, J. -H. Lee, and I. M. Kang*, "Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10nm tunneling field-effect transistors," Jpn. J. Appl. Phys., vol. 55, pp. 06GG02-01-06GG02-05, Jun. 2016.

[56] J. S. Heo, J. -W. Jo, J. Kang, C. -Y. Jeong, H. Y. Jeong, S. K. Kim, K. Kim, H. -I. Kwon, J. Kim, Y. -H. Kim, M. -G. Kim*, and S. -K. Park*, "Water-Mediated Photochemical Treatments for the Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors," ACS Appl. Mater. Interfaces., vol. 8, pp. 10403-10412, Apr. 2016.

[55] Y. J. Yoon, J. H. Seo, S. Cho, H. -I. Kwon, J. -H. Lee, and I. M. Kang*, "Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications," J. Semicond. Tech. Sci., vol. 16, pp. 172-178, Apr. 2016.

[54] C. -W. Song, K. -H. Kim, J. -W. Yang, D. -H. Kim, Y. -J. Choi, C. -H. Hong, J. -H. Shin, H. -I. Kwon, S. -H. Song*, and W. -S. Cheng*, "Effects of Mg suppressor layer on the InZnSnO thin-film transistors," J. Semicond. Tech. Sci., vol. 16, pp. 198-203, Apr. 2016.

[53] J. -H. Lee, Y. -J. Choi, C. -Y. Jeong, D. -K. Jung, S. Ham, and H. -I. Kwon*, "Electrical Instability of P-Channel SnO Thin-Film Transistors under Light Illumination," IEEE Electron Device Lett., vol. 37, pp. 295-298, Mar. 2016.

[52] C. -Y. Jeong, J. I. Kim, J. -H. Lee, J. -G. Um, J. Jang, and H. -I. Kwon*, "Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method," IEEE Electron Device Lett., vol. 36, pp. 1332-1335, Dec. 2015.

[51] Y. I. Jang, J. H. Seo, Y. J. Yoon, H. R. Eun, R. H. Kwon, J. -H. Lee, H. -I. Kwon*, and I. M. Kang*, "Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor," J. Semicond. Tech. Sci., vol. 15, pp. 554-562, Oct. 2015.

[50] Y. -J. Han, Y. -J. Choi, H. Jeong, and H. -I. Kwon*, "Investigation of intrinsic electrical characteristics and contact effects in p-type tin monoxide thin-film transistors using gated-four-probe measurements," J. Nanosci. Nanotechnol., vol. 15, pp. 7582-7585, Oct. 2015.

[49] X. Jin*, M. Wu, X. Liu, R. Chuai, H. -I. Kwon, J. -H. Lee, and J. -H. Lee, "A Novel High Performance Junctionless FETs with Saddle-Gate," J. Comput. Electron., vol. 14, pp. 661-668, Sep. 2015.

[48] C. -Y. Jeong, D. Lee, Y. -J. Han, Y. -J, Choi, and H. -I. Kwon*, "Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics," Semicond. Sci. Technol., vol. 30, pp. 085004-1-085004-6, Aug. 2015.

[47] Y. -J. Choi, Y. -J. Han, C. -Y. Jeong, S. -H. Song, G. W. Baek, S. H. Jin*, and H. -I. Kwon*, "Enhancement mode p-channel SnO thin-film transistors with dual-gate structures," J. Vac. Sci. Technol. B., Vol. 33, pp. 041203-1-041203-5, Jul./Aug. 2015.

[46] H. -S. Choi, H. Jeong, J. -H. Lee, and H. -I. Kwon*, "Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field-Effect Transistors Under Various Off-Stress Conditions," J. Nanoelectron. Optoelectron., vol. 10, pp. 397-401, Jun. 2015.

[45] J. I. Kim, I. -T. Cho, C. -Y. Jeong, D. Lee, H. -I. Kwon, K. D. Jung, M. S. Park, M. S. Seo, T. Y. Kim, J. H. Lee, and J. -H. Lee*, "Local-Degradation-Induced Threshold Voltage Shift in Turned-off Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress," IEEE Electron Device Lett., vol. 36, pp. 579-581, Jun. 2015.

[44] C. -Y. Jeong, D. Lee, J. I. Kim, S. -H. Song, J. -H. Lee, J. -G. Um, J. Jang, and H. -I. Kwon*, "Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors," J. Vac, Sci.Technol. B., vol 33, pp. 030603-1-030603-5, May/Jun. 2015.

[43] Y. -J. Han, Y. -J. Choi, C. -Y. Jeong, D. Lee, S. -H. Song, and H. -I Kwon*, "Environment-Dependent Bias Stress Stability of P-type SnO Thin-Film Transistors," IEEE Electron Device Lett., vol. 36, pp. 466- 468, May 2015.

[42] H. -S. Choi and S. -H. Song*, "Robust Optical Detection Method for the Vibrational Mode of a tuning Fork Crystal Oscillator," J. Sensor Sci. & Tech. vol. 24, pp. 1-3, Mar. 2015.

[41] H. -S. Choi, M. U, C. -Y. Jeong, H. -I Kwon, and S. -H. Song*, "Displacement Sensitivity Comparison between the First Two Symmetrical In-Plane Modes of a Tuning Fork Crystal Oscillator by Using an Optical Chopping Mehtod," J. Korean Phys. Soc., vol. 66, pp. 744-747, Mar. 2015.

[40] D. Lee, C. -Y. Jeong, S. -H. Song, X. -S. Jin, J. I. Kim, J. -H. Lee, and H. -I. Kwon*, "Asymmetrical Degradation Behaviors in Amorphous InGaZnO Thin-Film Transistors Under Various Gate and Drain Bias Stresses," J. Vac. Sci. Technol. B., vol. 33, pp. 011202-1-011202-8, Jan./Feb. 2015.

[39] Y. -J. Han, Y. -J. Choi, I. -T. Cho, S. H. J, J. -H. Lee, and H. -I. Kwon*, "Improvement of Long-Term Durability and Bias Stress Stability in P-type SnO Thin-Film Transistors Using a SU-8 Passivation Layer," IEEE Electron Device Lett., vol. 35, pp. 1260-1262, Dec. 2014.

[38] M. U, Y. -J. Han, S. -H. Song, I. -T. Cho, J. -H. Lee, and H. -I. Kwon*, "High performance p-type SnO thin-film transistors with SiOx gate insulator deposited by low-temperature PECVD method," J. Semicond. Tech. Sci., vol. 14, pp. 666-672, Oct. 2014.

[37] S. Y. Jang, J. -H. Shin, E. J. Hwang, H. -S. Choi, H. Jeong, S. -H. Song*, and H. -I. Kwon*, "Investigation of buffer traps in AlGaN/GaN Heterostructure field-effect transistors using a simple structure," J. Semicond. Tech. Sci., vol. 14, pp. 478-483, Aug. 2014.

[36] M. U, I. -T. Cho, S. H. Jin, J. -H. Lee, and H. -I. Kwon*, "Effects of active layer deposition temperature on the electrical performance of p-type SnO thin-film transistors," J. Korean Phys. Soc., vol. 65, pp. 286-290, Aug. 2014.

[35] J. I. Kim, K. -S. Chang, D. U. Kim, I. -T. Joe, C. -Y. Jeong, D. Lee, H. -I. Kwon, S. H. Jin, and J. -H. Lee*, "Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors," Appl. Phys. Lett., vol. 105, pp. 043501-1-082103-4, July 2014.

[34] J. I. Kim, I. -T. Cho, S. -M. Joe, C. -Y. Jeong, D. Lee, H. -I. Kwon, S. H. Jin*, and J. -H. Lee*, "Effect of Temperature and Electric Field on Degradataion in Amorphous InGaZnO TFTs under Positive Gate and Drain Bias Stress," IEEE Electron Device Lett., vol. 35, no. 4, pp. 458-460, Apr. 2014.

[33] C. -Y. Jeong, D. Lee, S. -H. Song, J. I. Kim, J. -H. Lee, and H. -I. Kwon*, "A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization," Semicond. Sci. Technol., vol. 29. pp. 045023-1-045023-6, Apr. 2014.

[32] I. -T. Cho, M. U, S. -H. Song, J. -H. Lee*, and H. -I. Kwon*, "Effects of air annealing on the electrical properties of p-type tin monoxide thin-film-transistors," Semicond. Sci. Technol., vol. 29. pp. 045001-1-045001-6, Apr. 2014.

[31] J. C. Park, I. -T. Cho, E. -S. Cho, D. H. Kim, C. -Y. Jeong, and H. -I. Kwon*, "Comparative Study of ZrO2 and HfO2 as a High-k Dielectric for Amorphous InGaZnO Thin Film Transistors," J. Nanoelectron. Optoelectron. vol. 9, no. 1, pp.67-70, Feb. 2014.

[30] C. -Y. Jeong, D. Lee, S. -H. Song, I.-T. Cho, J. -H. Lee, E. -S. Cho, and H. -I. Kwon*, “Border trap characterization in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX gate dielejctrics,” Appl. Phys. Lett. vol. 103, no. 14, pp. 142104-1-142104-5, Oct. 2013.

[29] M. Bae, K. M. Lee, E. -S. Cho, H. -I. Kwon, D. M. Kim, and D. H. Kim*, "An Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3465-3473, Oct. 2013.

[28] M. Wu, X. Jin*, H. -I. Kwon, R. Chuai, and J. -H. Lee, "The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling," J. Semicond. Tech. Sci., vol. 13, pp. 245-251, June 2013.

[27] B. -K. Choi, M. -K. Jeong, H. -I. Kwon, B. -G. Park, and J. -H. Lee*, "Current-Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner," Jpn. J. Appl. Phys., vol. 52, pp. 064202-1-064202-8, June 2013.

[26] I. -J. Park, C. -Y. Jeong, M. U, S. -H. Song, I. -T. Cho, J. -H. Lee, E. -S. Cho, and H. -I. Kwon*, ”Bias-stress-induced instabilities in p-type Cu2O thin-film transistors,” IEEE Electron Device Lett., vol. 34, no. 5, pp. 647-649, May 2013.

[25] X. Jin*, X. Liu, H. -I. Kwon, J. -H. Lee, and J. -H. Lee, "A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure," Solid State Electron., vol. 82, pp. 77-81, Apr. 2013.

[24] Jin. X*. -S, Liu. X, Kwon. H. -I, and Lee. J. -H, "A continuous current model of accumulation mode (junctionless) cylindrical surrounding-gate nanowire MOSFETs ," Chin. Phys. Lett., vol. 30, no. 3, pp. 038502-1-038502-4, Mar. 2013.

[23] C. -Y. Jeong, J. Sohn, S. -H. Song, I. -T. Cho, J. -H. Lee, E. -S. Cho, and H. –I. Kwon*, "Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors," Appl. Phys. Lett., vol. 102, pp. 082103-1-082103-4, Feb. 2013.

[22] J. Sohn, S. -H. Song, D. -W. Nam, I. -T. Cho, E. -S. Cho, J. -H. Lee*, and H. -I. Kwon*,”Effects of vacuum annealing on the optical and electrical properties of p-type copper oxide thin-film transistors,” Semicond. Sci. Technol., vol. 28, pp. 015005-1-015005-5, Jan. 2013.

[21] I. -T. Cho, J. -W. Lee, J. -M. Park, W. -S. Park, C. -S. Hwang, J. -S. Kwak, I. -H. Cho, H. -I. Kwon, H. Shin, B. -G. Park, and J. -H. Lee*, ”Full-swing a-IGZO inverter with a depletion load using negative bias instability under light illumination,” IEEE Electron Device Lett., vol. 33, no. 12, pp. 1726-1728, Dec. 2012.

[20] D. -W. Nam, I. -T. Cho, J. -H. Lee*, E. -S. Cho, J. Sohn, S. -H. Song, and H. -I. Kwon*,”Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors,” J. Vac. Sci. Technol. B., vol. 30, pp. 060605-1-060605-5, Nov./Dec. 2012.

[19] S. -H. Song, S. Kang, K. Park, S. Shin, and H. Kim*, "Applications of MEMS-MOSFET hybrid switches to power management circuits for energy harvesting systems," J. Power Electron., vol. 12, no. 6, pp. 954-959, Nov. 2012.

[18] C. -Y. Jeong, I. -J. Park, I. -T. Cho, J. -H. Lee, E. -S. Cho, M. K. Ryu, S. -H. K. Park, S. -H. Song, and H. -I. Kwon*, “Investigation of the low-frequency noise behavior and its correlation with the subgap density of states and bias-induced instabilities in amorphous InGaZnO thin-film transistors with various oxygen flow rates,” Jpn. J. Appl. Phys., vol. 51, pp. 100206-1-100206-3, Oct. 2012.

[17] J. -K. Lee, S. Jung, J. Park, S. -W. Chung, J. S. Roh, S. -J. Hong, I. H. Cho, H. -I. Kwon, C. H. Park, B. -G. Park, and J. -H. Lee*, "Accurate anaysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices," Appl. Phys. Lett., vol. 101, pp. 103506-1-103506-4, Oct. 2012.

[16] I. -J. Park, C. -Y. Jeong, I. -T. Cho, J. -H. Lee, E. -S. Cho, S. J. Kwon, B. Kim, W. -S. Cheong, S. -H. Song, and H. -I. Kwon*, "Fabrication of amorphous InGaZnO thin film transistor-driven flexible thermal and pressure sensors," Semicond. Sci. Technol., vol. 27, pp. 105019-1-105019-6, Oct. 2012.

[15] C. -Y. Jeong, J. Sohn, H. -I. Kwon, and S. -H. Song*, “Passivation of the exposed silver electrodes on a tuning fork crystal oscillator by chronoamperometry,” Jpn. J. Appl. Phys., vol. 51, pp. 090202-1-090202-3, Sep. 2012.

[14] J. -K. Lee, I. -T. Cho, H. -I. Kwon, C. S. Hwang, C. H. Park, and J. -H. Lee*, "Relation between conduction mechanism and low-frequency noise in polycrystalline TiOX-based resistive-switching memory devices," IEEE Electron Device Lett., vol. 33, no. 7, pp. 1063-1065, July 2012.

[13] I. -T. Cho, I. -J. Park, D. Kong, D. H. Kim, J. -H. Lee, S. -H. Song, and H. -I. Kwon*,”Extraction of the channel mobility in InGaZnO TFTs using multifrequency capacitance-voltage Method,” IEEE Electron Device Lett., vol. 33, no. 6, pp. 815-817, June 2012.

[12] S. Kim, Y. W. Jeon, Y. Kim, D. Kong, H. K. Jung, M. -K. Bae, J. -H. Lee, B. D. Ahn, S. Y. Park, J. -H. Park, J. Park, H. -I. Kwon, D. M. Kim, and D. H. Kim* ”Impact of oxygen flow rate on the instability under positive bias stress in dc-sputtered amorphous indium-gallium-zinc-oxide thin-film transistors,” IEEE Electron Device Lett., vol. 33, no. 1, pp. 62-64, Jan. 2012.

[11] D. H. Kim, Y. W. Jeon, S. Kim, Y. Kim, Y. S. Yu, D. M. Kim, and H. -I. Kwon*, “A Physical parameter-based SPICE models for InGaZnO thin film transistors applicable to process optimization and robust circuit design,” IEEE Electron Device Lett., vol. 33, no. 1, pp. 59-61, Jan. 2012.

[10] Y. M. Kim, I. H. Cho, H. -I. Kwon, and J. -H. Lee*, “Effects of Body Doping in a NAND Flash String without Source/Drain,” Jpn. J. Appl. Phys., vol. 50, pp. 114201-1-114201-4, Nov. 2011.

[9] D. -H. Kim, D. Kong, S. Kim, Y. W. Jeon, Y. Kim, D. M. Kim, and H. -I. Kwon*, “AC stress-induced degradation of amorphous InGaZnO thin film transistor inverter,” Jpn. J. Appl. Phys., vol. 50, pp. 090202-1-090202-3, Sep. 2011.

[8] J. -K. Lee, H. -J. Chung, J. Heo, S. Seo, I. H. Cho, H. -I. Kwon, and J. -H. Lee* "Reliability of bottom gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition," Appl. Phys. Lett., vol. 98, pp. 193504-1-193504-3, May 2011.

[7] J. -K. Lee, J. -W. Lee, J. Park, S. -W. Chung, J. S. Roh, S. -J. Hong, I. -H. Cho, H. -I. Kwon, and, J. -H. Lee* "Extraction of trap location and energy from random telegraph noise in amorphous TiOX resistance random access memories," Appl. Phys. Lett., vol. 98, pp. 143502-1-143502-3, Apr. 2011.

[6] J. C. Park, S. I. Kim, C. J. Kim, S. Kim, D. H. Kim, I. -T. Cho and H. -I. Kwon* "Impact of high-k HfO2 dielectric on the low-frequency noise behaviors in amorphous InGaZnO thin film transistors," Jpn. J. Appl. Phys., vol. 49, pp. 100205-1-100205-3, Oct. 2010.

[5] B. -K. Choi, M. -K. Jeong, H. -I. Kwon, and J. -H. Lee*, "Analytic oxide capacitance model of double and surrounding gate metal-oxide-semiconductor field effect transistors in linear region by considering inversion-layer capacitance ," Jpn. J. Appl. Phys., vol. 49, pp. 104201-1-104201-6, Oct. 2010.

[4] J. C. Park, S. W. Kim, C. J. Kim, S. Kim, D. H. Kim, I. -T. Cho and H. -I. Kwon*, "Low frequency noise in amorphous indium-gallium-zinc oxide thin film transistors from subthreshold to saturation," Appl. Phys. Lett., vol. 97, pp. 122104-1-122104-3, Sep. 2010.

[3] S. -M. Joe, J. -H. Yi, S. -K. Park, H. -I. Kwon, and J. -H. Lee*, “Position-dependent threshold-voltage variation by random telegraph noise in NAND flash memory strings,” IEEE Electron Device Lett., vol. 31, no. 7, pp. 635-637, July 2010.

[2] J. -K. Lee, H. Y. Jeong, I. -T. Cho, J. Y. Lee, S. -Y. Choi, H. -I. Kwon, and J. -H. Lee* “Conduction and low-frequency noise analysis in Al/a-TiOX/Al bipolar switching resistance random access memory devices,” IEEE Electron Device Lett., vol. 31, no. 6, pp. 603-605, June 2010.

[1] B.H. Hong, L. Choi, Y.C. Jung, S.W. Hwang* K.H. Cho, K.H. Yeo, D.-W. Kim, G.Y. Jin, D. Park, S.H. Song, Y.Y. Lee, M.H. Son, and D. Ahn, “Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors, IEEE Trans. Nanotechnology, Vol. 9, No. 6, pp. 754-758, Mar. 2010.

 

 


 Conferences (2010. 3 ~ )

 

[133] M. -G. Shin, S. -H. Hwang, K. -Yatsu, and H. -I. Kwon, "A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors," The 28th International Display Workshop (IDW '21), Virtual Conference, Japan, Dec. 1-3, 2021. (invited)

[132] K. -H Bae, C. -S Jeong, S. -H Hwang, F. -S Kim, H. -J Kim, H. -I Kwon, "A Highly Linear IGZO Synaptic Transistor with a Lithium Ion Based Electrolyte," ICAE 2021, Jeju, Korea, Nov. 9-12, 2021.

[131] K. -H Bae, M. -G Shin, S. -H Hwang, H. -S Jeong, D. -H Kim and H. -I Kwon, "Electrical Performance and Stability Improvement of p-type SnO Thin-Film Transistors Using Al2O3 Capping Layer," ICAE 2021, Jeju, Korea, Nov. 9-12, 2021.

[130] 황성현, 신민규, 이동호, 차현석, 정환석, 김대환, 권혁인, "IGTO 박막 트랜지스터의 채널층 두께가 양성자 빔 내방사선성에 미치는 영향," 2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일.

[129] 이동호, 차현석, 정환석, 황성현, 권혁인, "Aluminium Capping layer의 두께에 따른 IGTO TFT의 전기적 성능 및 신뢰성 향상," 2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일.

[128] 배강환, 신민규, 황성현, 정환석, 김대환, 권혁인, "Al2O3 캡핑 층을 이용한 SnO 박막 트랜지스터의 전기적 성능 및 신뢰성 개선," 2021년 한국전기전자학회 하계학술대회, 중앙대학교 서울캠퍼스, 대한민국, 2021년 8월 13일 (학술대회 우수논문상).

[127] H. -S Cha, H. -S Jeong, S. -H Hwang, D. -H Lee and H. -I Kwon, "Influence of Al capping Lyer Thickness on Stability and Electrical Performance of IGTO TFTs," AWAD 2021, Virtual, Aug. 26-27, 2021.

[126] S. -H Hwang, H. -S Cha, H. -S Jeong, D. -H Lee and H. -I Kwon, "Effects of Al cappling Layer Thickness on Electrical Performance and Stability of IGTO TFTs," IMID 2021, Online, Aug. 25-26, 2021.

[125] S. -H Hwang, M. -G Shin, D. -H Lee, H. -S Cha, H. -S Jeong, D. -H Kim and H. -I Kwon, "Effects of proton beam irradiation according to the channel layer thickness of IGTO thin film transistor," IEIE 2021, Jeju, Korea, Jun. 30-Jul. 2, 2021.

[124] D. -H Lee, H. -S Cha, H. -S Jeong, S. -H Hwang, H. -I Kwon, "Improvement of Electrical Performance and Stability of IGTO TFTs according to the thickness of Aluminum Capping Layer," IEIE 2021, Jeju, Korea, Jun. 30-Jul. 2, 2021.

[123] H. -S Cha, H. -S Jeong, S. -H Hwang, D. -H Lee, and H. -I Kwon, "Effects of Al Capping Layer Thickness on Electrical Performance and Stability of IGTO TFTs," ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[122] H. -S Jeong, D. -H Lee, H. -S Cha, S. -H Hwang and H. -I Kwon, "Effect of Post-Deposition Annealing Environments on Electrical Properties and Stability of High-Mobility IGTO TFTs," ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[121] K. -H Bae, M. -G Shin, S. -H Hwang, H. -S Jeong, D.-H Kim and H.-I. Kwon, "Electrical performance and stability improvement of SnO thin-film transistors using capping layer," ICEIC 2021, Jeju, Korea, Jan. 31-Feb. 3, 2021.

[120] H. -S Cha, S. -H Hwang, H. -S Jeong and Hyuck-In Kwon, "Effects of Al Capping Layer Thickness on Electrical Performance and Stability of IGTO TFTs," KCS 2021, Online, Jan. 25-29, 2021.

[119] H. -S. Jeong, H. -S Cha, S. -H Hwang, and H. -I. Kwon, "Effects of Post-Deposition Annealing Ambient on Electrical Characteristics and Stability of High-Mobility IGTO TFTs," KCS 2021, Online, Jan. 25-29, 2021.

[118] M. -G. Shin, K. -H. Bae, H. -S. Cha, H. -S. Jeong, D. -H. Kim and H.-I. Kwon, "Effects of Incorporating Ni Capping Layer in p-channel Tin Monoxide Thin-Film Transistors," The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, Nov. 1-4, 2020.

[117] H. -I. Kwon, "Low-Temperature-Operated Sensitive NO2 Gas Sensors Based on P-type SnOx Thin-Film Transistors," The 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'20), Kyoto, Japan, Sep. 1-4, 2020. (invited)

[116] D. -H. Kim, S. -Y. Hong, H. -J. Kim, H. -Y. Jeong, S. -H. Song, I. -T. Cho, J. -N. Noh, H. -S Shin, K. -S. Park, H. -C. Choi, I. -B. Kang, and H. -I. Kwon, "Effects of Lateral Carrier Diffusion and Source-Drain Parasitic Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Flim Transistors," KCS2020, Jeongseon, Korea, Feb. 12-14, 2020.

[115] H. -J. Joo, M. -G. Shin, H. -S. Cha, and H. -I Kwon, "Vertically Stacked Complementary Inverter Using p-type SnO and n-type IGZO Thin-Flim Transistors for Logic and Photo-sensor Operation,"  KCS2020, Jeongseon, Korea, Feb. 12-14, 2020 (outstanding poster paper award).

[114] M. -G. Shin, H. -Y. Jeong, H. -J Joo, H. -S. Jeong, D. -H. Kim, H. -S. Cha, and H. -I Kwon, "Effects of Proton Irradiation on p-type Polycrystalline Thin-Flim Transistors," KCS2020, Jeongseon, Korea, Feb. 12-14, 2020.

[113] H. -Y. Jeong, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, J. -W. Lee, H. -S. Cha and H. -I. Kwon, "Influence of MeV Proton Irradiation on p-type SnO Thin-Film Transistors," ICAE2019, Jeju, Korea, Nov. 5-8, 2019 (outstanding poster paper award).

[112] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon,"High performance NO2 gas sensor based on p-type SnOx thin film transistor," IMID2019, Kyeongju, Korea, Aug. 27-30, 2019

[111] H. -S. Jeong, M. -J. Park, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Effect of a pre-bias on the adsorption of NO2 gas in a-IGZO TFTs gas sensor," IMID2019, Kyeongju, Korea, Aug. 27-30, 2019

[110] H. -Y. Jeong, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Effects of Proton Irradiation on p-type SnO Thin-Film Transistors," IMID2019, Kyeongju, Korea, Aug. 27-30, 2019

[109] H. -J. Joo, M. -G. Shin, and H. -I. Kwon, "High-Gain Complementary Inverter with High Output Resistance Corbino Thin-Film Transistors Using P-Type SnO and N-Type IGZO Active Layers," IMID2019, Kyeongju, Korea, Aug. 27-30, 2019

[108] H. -Y. Jeong, X. Jin, and H. -I. Kwon, "Electrical stability of p-channel tin monoxide thin-film transistors under harsh environments," ADMD2019, Guangzhou, China, July. 23-25, 2019

[107] H. -J. Joo, X. Jin, and H. -I. Kwon, "Investigation of electrical performance of Corbino structure p-channel tin monoxide thin-film transistors," ADMD2019, Guangzhou, China, July. 23-25, 2019

[106] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon, "Room-temperature-operated Sensitive NO2 Gas Sensors Based on P-type SnOx Thin-Film and Thin-Film Transistor," AWAD2019, Busan, Korea, Jun. 19-21, 2019.

[105] M. -J. Park, H. -S. Jeong, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Effects of Pre-Bias Application on NO2 Gas Sensors," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[104] H. -S. Jeong, S. -D. Bae, S. -H. Kwon, and H. -I. Kwon, "Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[103] H. -Y. Jeong, H. -J. Joo, M. -G. Shin, H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Proton Radiation Effects on P-type SnO Thin-Film Transistors," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[102] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon, "Influence of Moisture on the Electrical instability of Zinc Oxynitride Thin-Film Transistors,"  IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[101] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon, "Influence of Oxygen Flow Rate on the Electrical Instability of ZnON Thin-Film Transistors," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[100] H. -J. Joo, H. -S. Jeong, M. -G. Shin, and H. -I. Kwon, "High-Gain CMOS Inverter Based on  High Output Resistance Corbino Thin-Film Transistors Using n-type IGZO and P-type SnO Active Layers," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019 (outstanding poster paper award).

[99] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Effects of Sequential Ultraviolet and Thermal Treatment on Electrical Performance and Stabilities of High Mobility ZnON TFTs," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[98] M. -J. Park, H. -S. Jeong, H. -J. Joo, H. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Improved Sensing Properties by Pre-bias on the IGZO TFTs Gas Sensor," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[97] H. -S. Jeong, D. -H. Kim, S. -H. Song, and H. -I. Kwon, "Impact of Thermal Annealing Temperature on Electrical Performances of ZnON TFTs," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[96] H. -J. Joo, S. -H. Kwon, and H. -I. Kwon, "Effects of Simultaneous Ultraviolet and Thermal Treatment on Physical and Chemical Properties of RF-sputtered P-type SnO Thin-Films," IEIE Summer Conferense 2019, Jeju, Korea, Jun. 26-28, 2019.

[95] H. -S. Jeong, M. -J. Park, and H. -I. Kwon "Room-temperature-operated Sensitive NO2 Gas Sensors Based on P-type SnOx Thin-Film and Thin-Film Transistor," KIEEME2019, Hoengseong, Korea, Jun. 19-21, 2019.

[94] H. -S. Jeong, M. -J. Park, and H. -I. Kwon "Low Temperature NO2 Gas Sensors based on P-type SnO Thin-Film and Thin-Film Transistor," KCS2019, Hoengseong, Korea, Feb. 13-15, 2019.

[93] D. Keum, S. -Y. Hong, S. -I. Cho, S. Yang, H. -I. Kwon, and H. Kim "Low Frequency Noise and Cathodoluminescence Characteristics of Normally-off AlGaN/GaN Recessed MISHFETs with 5 MeV Proton Irradiation," KCS2019, Hoengseong, Korea, Feb. 13-15, 2019.

[92] H. -J. Joo, S. -H. Kwon, and H. -I. Kwon, "Simultaneous Ultraviolet and Thermal Treatment Effects on RF-sputtered P-type SnO Thin-Films and Thin-Film Transistors," KCS2019, Hoengseong, Korea, Feb. 13-15, 2019.

[91] H. -I. Kwon, "Recent Progress in P-type SnO Thin-Film Transistors" The Korean Institute of Electrical and Electronic Material Engineers Annual Autumn Conference(KIEEME Annual Autumn Conference), Nov. 20-22, 2018. (invited)

[90] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon  "Low-temperature NO2 Sensing Characteristics of  p-type SnO Thin-film-based Gas Sensor," 5th Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, Korea, Nov. 11-14, 2018.

[89] H. -I. Kwon, "Recent Developments in Tin Monoxide(SnO)-based P-Channel Oxide Thin-Film Transistors," 5th Electronic Materials and Nanotechnology for Green Environment(ENGE 2018), Jeju, Korea, Nov. 11-14, 2018. (invited)

[88] H. -I. Kwon, "Short channel effects in oxide thin-film transistors," 21th Transparent Oxide Semiconductors (TOS) Workshop, Daejeon, Korea, Oct. 25-27, 2018.

[87] 권혁인, "P형 산화물 반도체 박막 트랜지스터의 기술 동향," 2018년 한국물리학회 가을 학술논문발표회, 창원컨벤션센터, 대한민국, 2018년 10월 24일-26일. (invited)

[86] K. H. Kim, H. -I. Kwon, S. J. Kwon, and E. -S. Cho, "Effect of the Pulse Repetition Numbers of Xe Flash Lamp on the Electrical Characteristics of a-IGZO Thin Film Transistor," 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2018), pp. 300-302, Kitakyushu, Japan, Jul. 1-4, 2018.

[85] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Effects of Sequential Ultraviolet and Thermal Treatment on electrical performance and stabilities of high mobility ZnON TFTs," 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2018), pp. 296-299, Kitakyushu, Japan, Jul. 1-4, 2018.

[84] D. -H. Kim, and H. -I. Kwon, "Channel thickness dependency of zinc oxynitride thin-film transistors on electrical and thermal stabilities,"2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2018), pp. 293-295, Kitakyushu, Japan, Jul. 1-4, 2018.

[83] J. -H. Lee, M. -J. Park, and H. -I. Kwon, "A Study of Carrier Transport Mechanism in p-type WSe2 Field-Effect Transistor," 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2018), pp. 281-285, Kitakyushu, Japan, Jul. 1-4, 2018.

[82] H. -S. Jeong, M. -J. Park, S. -H. Kwon, H. -J. Joo, and H. -I. Kwon, "Low-temperature NO2 sensing characteristics of p-type SnO thin-film-based gas sensor," 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2018), pp. 265-270, Kitakyushu, Japan, Jul. 1-4, 2018.

[81] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Impacts of Sequential Ultraviolet and Thermal Treatment on Performances and Stability in ZnON Thin Film Transistors," KCS2018, Jeongseon, Korea, Feb. 5-7, 2018.

[80] D. -H. Kim, M. -J. Park, and H. -I. Kwon, "A Research on Electrical and Thermal Stabilities of ZnON Thin-Film Transistors with Varying Channel Thickness," KCS2018, Jeongseon, Korea, Feb. 5-7, 2018.

[79] H. -J. Kim, S. -Y. Hong, C. -Y. Jeong, S. -D. Bae, J. -H. Lee, and H. -I. Kwon, "Carrier Transport Mechanisms in P-channel SnO Thin-Film Transistors," KCS2018, Jeongseon, Korea, Feb. 5-7, 2018.

[78] S. -D. Bae, S. -H. Kwon, H. -S. Jeong, and H. -I. Kwon, "A study of the physical and chemical properties of p-type tin oxide thin-films for transistor applications with argon plasma surface treatment," KCS2018, Jeongseon, Korea, Feb. 5-7,2018.

[77] M. -J. Park, H. -I. Kwon, "Buffer trap extraction in AlGaN/GaN HFETs using a simple test device," KCS2018, Jeongseon, Korea, Feb. 5-7, 2018 (outstanding poster paper award).

[76] D. -H. Kim and H. -I. Kwon, "A study on electrical and thermal stabilities of zinc oxynitride thin-film transistors with varying channel thickness," ICEIC2018, Hawaii, USA, Jan. 24-27, 2018.

[75] H. -I. Kwon, "Effect of sequential ultraviolet and thermal treatment on zinc oxynitride thin-films and the associated thin-film transistor properties," 19th Transparent Oxide Semiconductors (TOS) Workshop, Busan, Korea, Oct. 27-29, 2017.

[74] S. -Y. Hong, H. -J. Kim, C. -Y. Jeong, J. I. Kim, J. -H. Lee, and H. -I. Kwon, "Density of Bulk and Interface States Extraction in amorphous InGaZnO Thin-Film Transistors," The 2017 European Materials Research Society Fall Meeting (E-MRS 2017 Fall Meeting), Warsaw, Poland, Sep. 18-21, 2017.

[73] H. -J. Kim, S. -Y. Hong, D. -H. Kim, H. -S. Jeong, C. -Y. Jeong, and H. -I. Kwon, "Carrier Transport Mechanism in High-Mobility Zinc Oxynitride Thin-Film Transistors," The 2017 European Materials Research Society Fall Meeting (E-MRS 2017 Fall Meeting), Warsaw, Poland, Sep. 18-21, 2017.

[72] C. -H. Lee, C. -H. Hong, J. -M. Lee, J. -J. Park, H. -Y. Choi, H. -I. Kwon, and W. -S. Cheong, "Development of rainbow-free pattern design for single layer capacitive touch screen panel using oxide/metal/oxide electrodes," The 2017 European Materials Research Society Fall Meeting (E-MRS 2017 Fall Meeting), Warsaw, Poland, Sep. 18-21, 2017.

[71] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon, "The Effect of Moisture on the Electrical Stability of Zinc OxynitrideThin-Film Transistors," The 17th International Meeting on Information Display (IMID 2017), Busan, Korea, Aug. 28-31, 2017.

[70] H. -J. Kim, S. -Y. Hong, C. -Y. Jeong, S. -D. Bae, J. -H. Lee, and H. -I. Kwon, "Charge Transport Mechanism over a Wide Range of Temperatures and Realistic Operation Regimes of P-Channel SnO Thin-Film Transistors," The 17th International Meeting on Information Display (IMID 2017), Busan, Korea, Aug. 28-31, 2017.

[69] H. -J. Kim, S. -Y. Hong, D. -H. Kim, C. -Y. Jeong, J. -H. Lee, and  H. -I. Kwon, "Analysis on Bulk and Interface Trap Densities in P-type Tungsten Diselenide Thin-Film Transistors," The 17th International Meeting on Information Display (IMID 2017), Busan, Korea, Aug. 28-31, 2017.

[68] J. I. Kim, W. -M. Kang, H. -I. Kwon, and J. -H. Lee, "Transient current analysis of amorphous In-Ga-Zn-O thin film transistors," ICANS 2017, Seoul, Korea, Aug. 21-25, 2017.

[67] K. H. Kim, S. J. Kwon, S. -D. Bae, H. -I. Kwon, and E. -S. Cho, "Xe Flash Lamp Annealing on Amorphous-Indium Gallium Zinc Oxide Film and its Application," 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2017), Gyeongju, Korea, Jul. 3-5, 2017.

[66] S. -D. Bae, S. -H. Kwon, H. -S. Jeong, and H. -I. Kwon, "Effect of Argon Plasma Surface Treatment on the Physical and Chemical Properties of p-Type SnO Thin-Films for Thin-Film Transistor Applications," EM-NANO2017, Fukui, Japan, Jun. 18-21, 2017.

[65] H. -J. Kim, S. -Y. Hong, D. -H. Kim, C. -Y. Jeong, J. -H. Lee, and H. -I. Kwon, "Investigation on Bulk and Interface Trap Densities in p-type High-Mobility Tungsten Diselenide Thin-Film Transistors," EM-NANO2017, Fukui, Japan, Jun. 18-21, 2017.

[64] H. -J. Kim, S. -Y. Hong, C. -Y. Jeong, S. -D. Bae, J. -H. Lee, and H. -I. Kwon, "Carrier Transport Mechanism in Realistic Operating Condition of p-Channel SnO Thin-Film Transistors," EM-NANO2017, Fukui, Japan, Jun. 18-21, 2017.

[63] D. -H. Kim, H. -S. Jeong, and H. -I. Kwon, "Influence of Moisture on the Electrical instability of Zinc Oxynitride Thin-Film Transistors," EM-NANO2017, Fukui, Japan, Jun. 18-21, 2017.

[62] H. -S. Jeong, D. -H. Kim, and H. -I. Kwon, "Effects of Sequential Ultraviolet and Thermal Treatment on Performances and Stability in High-Mobility ZnON TFT," EM-NANO2017, Fukui, Japan, Jun. 18-21, 2017.

[61] H. -J. Kim, C. -Y. Jeong, and H. -I. Kwon, "Experimental Investigation of Physical Mechanism for Asymmetrical Degradation and Related Noise Properties in a-IGZO TFTs under Simultaneous Gate and Drain Bias Stresses," KCS2017, Hongcheon, Korea, Feb. 13-15, 2017.

[60] C. -Y. Jeong, H. -J. Kim, J. I. Kim, J. -H. Lee, and H. -I. Kwon, "Determination of Bulk and Interface Density of States in a-IGZO TFTs," KCS2017, Hongcheon, Korea, Feb. 13-15, 2017.

[59] H. -S. Jeong, D. -H. Kim, H. Jeong, C. -Y. Jeong, and H. -I. Kwon, "Optimization of Annealing Temperature and Active Layer Thickness in High Mobility ZnON Thin-Film Transistors," KCS2017, Hongcheon, Korea, Feb. 13-15, 2017.

[58] D. -H. Kim, H. -S. Jeong, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Influence of Oxygen Flow Rate on the Electrical Instability of ZnON Thin-Film Transistors," KCS2017, Hongcheon, Korea, Feb. 13-15, 2017.

[57] C. -Y. Jeong, H. -J. Kim, D. -H. Kim, H. -S. Kim, E. S. Kim, T. S. Kim, J. S. Park, J. -B. Seon, K. S. Son, S. Lee, S. -H. Cho, Y. S. Park, D. H. Kim, and H. -I. Kwon, "Charge Transport Mechanism and Low-Frequency Noise Properties in High Mobility ZnON Thin-Film Transistors," KCS2017, Hongcheon, Korea, Feb. 13-15, 2017.

[56] H. -S. Jeong, D. -H. Kim,  H. -J. Kim, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Impact of Thermal Annealing Temperature on Electrical Performances of ZnON TFTs," 4th Electronic Materials and Nanotechnology for Green Environment(ENGE 2016), Jeju, Korea, Nov. 6-9, 2016.

[55] D. -H. Kim, H. -S. Jeong, H. -J. Kim, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Impact of Oxygen Flow Rate on the Electrical Performances and Stabilities in ZnON TFTs," 4th Electronic Materials and Nanotechnology for Green Environment(ENGE 2016), Jeju, Korea, Nov. 6-9, 2016.

[54] H. -I. Kwon, "Study on the separate extraction of interface and bulk trap densities in amorphous indium-gallium-zinc oxide thin-film transistors," 17th Transparent Oxide Semiconductors (TOS) Workshop, Suncheon, Korea, Nov. 3-5, 2016.

[53] C. -Y. Jeong, H. -J. Kim, J. -H. Lee, S. -D. Bae, and H. -I. Kwon, "1/f Noise Characteristics of P-Channel Tin Monoxide Thin-Film Transistors," The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD 16), Kyoto, Japan, Jul. 6-8, 2016.

[52] J. -H. Lee, Y. -J. Choi, C. -Y. Jeong, and H. -I. Kwon, "The Impact of the Light-Illumination in P-Channel SnO Thin-Film Transistors," 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016), Hakodate, Japan, Jul. 4-6, 2016.

[51] M. -K. Eo, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon, "Capping Layer Effects on p-GaN Gate HEMT," KCS2016, Jeongseon, Korea, Feb. 22-24, 2016 (outstanding poster paper award).

[50] C. -Y. Jeong, J. I. Kim, J. -H. Lee, J. -G. Um, J. Jang, and H. -I. Kwon, "Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method," KCS2016, Jeongseon, Korea, Feb. 22-24, 2016.

[49] C. -Y. Jeong, Y. -J. Choi, G. -W. Baek, S. -H. Jin, Jin X. -S., and H. -I. Kwon, "Control of threshold voltage in p-type tin monoxide thin-film transistors through double-gate structures," The 3rd International Conference on Advanced Electromaterials (ICAE 2015), pp. 498, Jeju, Korea, Nov. 17-20, 2015.

[48] C. -Y. Jeong, Y. -J. Choi, and H. -I. Kwon, "A study on density of states in p-type tin monoxide from temperature-dependent field-effect characteristics," The 3rd International Conference on Advanced Electromaterials (ICAE 2015), pp. 496, Jeju, Korea, Nov. 17-20, 2015.

[47] J. -W. Yang, C. -H. Hong, C. -W. Song, K. -H. Kim, W. -H. Seo, Y. -B. Na, H. -I. Kwon, and W. -S. Cheong, "Electrical performance of ZITO:Er thin film transistors with top gate ," The 3rd International Conference on Advanced Electromaterials (ICAE 2015), pp. 462, Jeju, Korea, Nov. 17-20, 2015.

[46] J. -W. Yang, C. -H. Hong, K. -H. Kim, C. -W. Song, W. -H. Seo, Y. -B. Na, H. -I. Kwon, and W. -S. Cheong, "Effects of Er doping on the electrical characteristics of bottom gate ZITO thin film transistors," The 3rd International Conference on Advanced Electromaterials (ICAE 2015), pp. 461, Jeju, Korea, Nov. 17-20, 2015.

[45] W. -H. Seo, C. -H. Hong, J. -W. Yang, Y. -B. Na, H. -I. Kwon, and W. -S. Cheong, "Development of large size window-unified capacitive touch screen panel," The 3rd International Conference on Advanced Electromaterials (ICAE 2015), pp. 453, Jeju, Korea, Nov. 17-20, 2015.

[44] H. -I. Kwon, Y. -J. Han, Y. -J. Choi, and C. -Y. Jeong, "Stability Issues in P-Channel Tin Momoxide Thin-Film Trnasistors," The 15th International Meeting on Information Display (IMID 2015), pp. 215, Daegu, Korea, Aug. 18-21, 2015. (invited)

[43] C. -Y. Jeong, Y. -J. Han, Y. -J. Choi, X. Jin, and H. -I. Kwon, "Electrical Performance and Instabilities of p-type SnO Thin-Film Transistors," 30th Intermational Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2015), Seoul, Korea, June 29-July 2, 2015.

[42]  Y. -J. Choi, Y. -J. Han, C. -Y. Jeong, S. -H. Song, G. W. Baek, S. H. Jin, X. Jin, and H. -I. Kwon, "Threshold Voltage Control in Double Gate p-type SnO Thin-Film Transistors," 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), pp. 168-172, Jeju, Korea, June 29-July 1, 2015.

[41] C. -Y. Jeong, D. Lee, Y. -J. Han, Y. -J. Choi, X. Jin, and H. -I. Kwon, "Investigation of Subgap Density of States in p-type SnO Thin-Film Transistors," 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), pp. 127-131, Jeju, Korea, June 29-July 1, 2015.

[40] C. -Y. Jeong, D. Lee, S. -H. Song, H. -I. Kwon, J. I. Kim, J. -H. Lee, J. -G. Um, J. Jang, and X. Jin, "Characterization of Bottom and Top Channel Interface Properties in Double-Gate Back-Channel-Etched a-IGZO TFTs," 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), pp. 122-126, Jeju, Korea, June 29-July 1, 2015.

[39] Y. J. Yoon, J. H. Seo, J. S. Kim, Y. J. Kim, S. Y. Kim, H. R. Eun, H. S. Kang, Y. I, Jang, R. H. Kwon, J. -H. Lee, I. M. Kang, S. Cho, and H. -I. Kwon, "Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation," 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015), pp. 112-115, Jeju, Korea, June 29-July 1, 2015.

[38] Y. -J. Han, C. -Y. Jeong, Y. -J. Choi, and H. -I. Kwon, "Electrical Performances and Stabilities in P-Channel Tin Monoxide (SnO) Thin-Film Transistors," 15th Oxide Semiconductors (TOS) Workshop, Jeonju, Korea, May 28-30, 2015.

[37] H. -S. Choi, H. J. S. Y. Jang, H. C. Yeoh, S. -H. Song, and H. -I. Kwon, "Investigation of Electrical Performance Degradation in p-AlGaN Gate Heterostructure Field Effect Transistors under Various Off-Stress Conditions," KCS2015, Incheon, Korea, Feb. 10-12, 2015.

[36] D. Lee, C. -Y. Jeong, S. -H. Song, J. X. -Shi, and H. -I. Kwon, "Investigation of the Asymmetrical Degrdadation Behaviors under Various Gate and Drain Bias Stresses in a-InGaZnO Thin-Film Transistors," KCS2015, Incheon, Korea, Feb. 10-12, 2015.

[35] Y. -J. Han, Y. -J. Choi, S. -H. Song, H. -C. Yeoh, and H. -I. Kwon, "Passivation Effects in Tin Oxide Thin Film Transistors," ICEIC 2015, Singapore, Jan. 28-31, 2015.

[34] Y. -J. Han, Y. -J. Choi, and H. -I. Kwon, "Fabrication of p-type SnO thin-film transistors for the implementation of oxide TFT-based complementary logic circuits," International Workshop on Convergent Materials for Future IT 2014, pp. 23, Seoul, Korea, Dec. 4, 2014.

[33] J. -W. Yang, J. -H. Shin, K. -H. Kim, N. -M. Park, C. -W. Song, C. -H. Hong, W. -H. Seo, H. -I. Kwon, and W. -S. Cheong, “Effects of Sn doping on GZO:Sn thin film transistor,” 2014 KISE fall Conference, pp. 248-249, Suwon, Korea, Nov. 20-21, 2014.

[32] C. -W. Song, C. -H. Hong, J. -H. Shin, K. -H. Kim, N. -M. Park, J. -W. Yang,  W. -H. Seo, H. -I. Kwon, and W. -S. Cheong, “The effect of the plasma treatment on the electric properties and stability of IZO-based TFTs,” 2014 KISE fall Conference, pp. 246-247, Suwon, Korea, Nov. 20-21, 2014.

[31] W. -H. Seo, N. -M. Park,  K. -H. Kim, J. -H. Shin, C. -H. Hong, C. -W. Song, J. -W. Yang, H. -I. Kwon, and W. -S. Cheong, “Development of 30inch window-unified Touch Screen Panel,” 2014 KISE fall Conference, pp. 242-243, Suwon, Korea, Nov. 20-21, 2014.

[30] D. -E. Lee, C. -Y. Jeong, X. -S. Jin, and H. -I. Kwon, “Effect of electric field on asymmetric degradation in a-IGZO TFTs under positive bias stress,” 2014 KISE fall Conference, pp. 108-109, Suwon, Korea, Nov. 20-21, 2014.

[29] W. -H. Seo, C. -W. Song, J. -W. Yang, K. -H. Kim, J. -H. Shin, N. -M. Park,  C. -H. Hong, H. -I. Kwon, and W. -S. Cheong, "Development of Copper Bezel Metal for Window-unified 30" Touch Screen Panel," ENGE 2014, Jeju, Korea, Nov. 16-19, 2014.

[28] M. U, Y. -J. Han, Y. -J. Choi, S. -H. Song, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, "Gate Insulator Effects on the Electrical Performance of P-type SnO Thin-Film Transistors," ENGE 2014, Jeju, Korea, Nov. 16-19, 2014.

[27] C. -W. Song, J. -W. Yang, J. -H. Shin, K. -H. Kim, N. -M. Park,  C. -H. Hong, W. -H. Seo, H. -I. Kwon, and W. -S. Cheong, "The Effects of Pose-deposition Treatments of Gate Insulator on the Electrical Properties of IZO-based Oxide TFTs," ENGE 2014, Jeju, Korea, Nov. 16-19, 2014.

[26] H. -I. Kwon, “Local Degradation mechanism of a-IGZO TFTs under simultaneous gate and drain bias stresses,” 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2014), pp. 179-181, Kanazawa, Japan, July 1-3, 2014. (invited)

[25] H. -S. Choi, H. Jeong, S. Y. Jang, J. -H. Shin, E. J. Hwang, S. -H. Song, and H. -I. Kwon, “Analysis of buffer traps in GaN-based devices using a simple test structure,” 2014 IEIE Summer Conference, pp. 2002-2004, Jeju, Korea, June 25-27, 2014.

[24] D. -E. Lee, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon, “Investigation of asymmetric trap generation in a-InGaZnO TFTs under simultaneous gate and drain bias stresses,” 2014 IEIE Summer Conference, pp. 339-314, Jeju, Korea, June 25-27, 2014.

[23] C. -Y. Jeong, D. Lee, and H. -I. Kwon, “Local Degradation of Amorphous InGaZnO Thin-Film Transistors Under Various Gate and Drain Bias Stresses,” 13th Oxide Semiconductors (TOS) Workshop, Suwon, Korea, May 23, 2014.

[22] J. -H. Bae, S.-K. Hwang, J. -M. Shin, H. -I. Kwon, C. H. Park, H. Choi, J. -B. Park, J. Kim, J. Ha, K. Park,  J. Oh, J. Shin, U. -I. Chung, K.-S. Seo, and J. -H. Lee, "Analysis of DC/Transient Current and RTN Behaviors Related to Traps in p-GaN Gate HEMT," IEEE International Electron Devices Meeting, pp. 786-789, Washington, USA, Dec. 9-13, 2013.

[21] H. -I. Kwon, C. -Y. Jeong, I. -J. Park, M. U. S. -H. Song, I. -T. Cho, and J. -H. Lee, "Fabracation of Electrical Characterization of P-type Oxide Thin-Film Transistors," ICAE 2013, Jeju, Korea, Nov. 12-15, 2013.

[20] C. -W. Song, J. -H. Shin, N. -M. Park, K. -H. Kim, C. -H. Hong, H. -I. Kwon, and W. -S. Cheong, "Effects of Channel Width on the Electrical Characteristics of InZnO Thin-Film Transistors under High Drain Voltage," ICAE 2013, Jeju, Korea, Nov. 12-15, 2013.

[19] M. -K. Eo, H. -S. Choi, S. Y. Jang, W.-S. Kim, J. H. Shin, T. Jang, and H. -I. Kwon, "Effect of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HEMTs," 2013 International Conference on Solid State Devices and Materials, Fukuoka, Japan, Sep. 24-27, 2013.

[18] D. Lee, C. -Y. Jeong, S. -H. Song, and H. -I. Kwon , “Border trap extraction in amorphous InGaZnO thin-film transistors,” 11th Oxide Semiconductors (TOS) Workshop, Busan, Korea, June 12 – 14, 2013 (outstanding student paper award).

[17] C. -Y. Jeong, I. -J. Park, M. U, Y. -J. Han, S. -H. Song, and H. -I. Kwon , “Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors,” 11th Oxide Semiconductors (TOS) Workshop, Busan, Korea, June 12 – 14, 2013.

[16] C. -W. Song, J. -H. Shin, N. -M. Park, K. -H. Kim, C. -H. Hong, H. -I. Kwon, and W. -S. Cheong , “The effect of gate insulator on the electrical properties of IZO-based oxide-TFTs,” 11th Oxide Semiconductors (TOS) Workshop, Busan, Korea, June 12 – 14, 2013.

[15] H. -I. Kwon, M. -K. Eo, H. -S. Choi, and S. -H. Song , “Trap characterization in normally-off AlGaN/GaN heterostructure field effect transistors,” 11th Oxide Semiconductors (TOS) Workshop, Busan, Korea, June 12 – 14, 2013.

[14] J. -H. Bae, I. Hwang, J. -M. Shin, H. -I. Kwon, C. H. Park, J. Ha, J. W. Lee, H. Choi, J. Kim, J. -B. Park, J. Oh, J. Shin, U. -I. Chung, and J. -H. Lee, "Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT," IEEE International Electron Devices Meeting, pp. 303-306, San Francisco, USA, Dec. 10-12, 2012.

[13] H. -I. Kwon, "Characterization of low-frequency noise properties in a-IGZO TFTs," KRISS Computational Metrology Workshop: Special Topics for Materials Innovation - Amorphous Oxide Semiconductors, Daejeon, Korea, Nov. 2, 2012. (invited)

[12] J. C. Park, D. H. Kim, I. -T. Cho, C. -Y. Jeong, and H. -I. Kwon, "Comparative study of ZrO2 and HfO2 as a high-k dielectric for amorphous InGaZnO thin film transistors," The 2nd International Symposium on Transparent Conductive Coatings, Seoul, Korea, Oct. 4-5, 2012.

[11] J. Sohn, D.-W. Nam, J. -H. Lee, and H. -I. Kwon, "Effect of fabrication conditions on the electrical and optical performances of the Cu2O-based p-type oxide thin-film transistors," 2nd ENGE 2012, Jeju, Korea, Sep. 16-19, 2012. (invited)

[10] J. Sohn, S. -H. Song, J. M. Eom, E. -S. Cho, and H. -I. Kwon, "Fabrication of transparent p-type copper oxide thin-film transistors using high-temperature vacuum annealing process," 2012 IEEK Summer Conference, pp. 126-129, Jeju, Korea, June 27 – 29, 2012.

[9] C. -Y. Jeong, I. -J. Park, M. -K. Eo, S. M. Lee, J. M. Eom, E. -S. Cho, M. K. Ryu, S. -H. K. Park, and H. -I. Kwon , “Low-frequency noise in amorphous InGaZnO thin-film transistors with various oxygen flow rates and its relation with the subgap density of states and bias-induced instabilities,” 9th Oxide Semiconductors (TOS) Workshop, Daegu, Korea, June 20 – 22, 2012.

[8] H. –I. Kwon, J. Shon, D. -W. Nam, I. -T. Cho, S. -H. Song, and J. H. Lee, “High-temperature vacuum annealing effects on the electrical and optical properties of p-type copper oxide TFTs,” 9th Oxide Semiconductors (TOS) Workshop, Daegu, Korea, June 20 – 22, 2012.

[7] I.-T. Cho, I.-J. Park, J. -H. Lee, S. -H. Song, H. -I. Kwon, "Effect of subgap states on the channel mobility in amorphous indium-gallium-zinc oxide thin film transistors," ICEIC 2012, pp.190-191, Jeongseon, Korea, Feb. 1-3 , 2012.

[6] D.-W. Nam, J. Sohn, I. T. Cho, S. -H. Song, H. -I. Kwon, J. -H. Lee, "Fabrication of p-type copper oxide thin-film transistors using the in-situ vacuum annealing process," ICEIC 2012, pp.184-185, Jeongseon, Korea, Feb. 1-3 , 2012.

[5] H. -I. Kwon, “Extraction of the channel mobility in InGaZnO TFTs using charge transport theory and multi-frequency capacitance-voltage method,” 8th Oxide Semiconductors (TOS) Workshop, Jeju, Korea, Nov. 15 – Nov. 16, 2011.

[4] I. T. Cho, J. M. Park, W. S. Cheong, C. S. Hwang, H. -I. Kwon, B. -G. Park, H. Shin, and J. -H. Lee, “Effect of light illumination on the low-frequency noises in amorphous-IGZO TFTs,” 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, pp. 419-422, Incheon, Korea, July 4 – July 7, 2011.

[3] H. -I. Kwon, “Investigation of the low-frequency noise behaviors in a-IGZO TFTs,” 7th Oxide Semiconductors (TOS) Workshop, Gwangju, Korea, June 16 – June 17, 2011. (invited)

[2] J. -W. Lee, M. -K. Jeong, H. -I. Kwon, B. -G. Park, H. Shin, and J. -H. Lee, “3-D stacked active layers and vertical gate NAND flash strings with single-crystal Si channel by adopting Si/SiGe selective etch process,” 2010 Silicon Nanoelectronics Workshop, pp. 141-142, Honolulu, USA, June 13 – June 14, 2010.

[1] J. H. Lee, H. Shin, H. -I. Kwon, B. -G. Park, and Y. -J. Park, “Electrical instabilities and low-frequency noise in InGaZnO thin-film transistors,” 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, June 5 – June 9, 2010.

 

 


 

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School of Electrical & Electronics Engineering, Chung-Ang University
221, Huesuk-Dong, Dongjak-Gu, Seoul, 156-756, Korea